Publicaciones

• Article dans une revue

Covalent functionalization of silicon nitride surfaces by semicarbazide group

Yannick Coffinier, Rabah Boukherroub, X. Wallart, J.P. Nys, J.O. Durand, D. Stiévenard, B. Grandidier

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601, pp.5492-5498. ⟨10.1016/j.susc.2007.09.017⟩. ⟨hal-00283127⟩

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited...

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩

• Article dans une revue

Selective filtering of confined optical waves in a straight waveguide coupled to a lateral stub

Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, L. Dobrzynski, Jean-Pierre Vilcot, Mohamed Bouazaoui, J.P. Vigneron

We report numerical simulations, based on a finite difference time domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. The incident wave which is of transverse magnetic polarization (TM) is either...

Journal of Optics A: Pure and Applied Optics, 2007, 9, pp.S431-S436. ⟨10.1088/1464-4258/9/9/S25⟩. ⟨hal-00285664⟩

• Article dans une revue

New flowmetric measurement methods of power dissipated by an ultrasonic generator in aqueus medium

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2007, 14, pp.99-106. ⟨10.1016/j.ultsonch.2006.03.004⟩. ⟨hal-00255844⟩

• Communication dans un congrès

Simulation de la recristallisation du silicium par dynamique moléculaire

Evelyne Lampin, Christophe Krzeminski, Quentin Brulin, Fabrizio Cleri

Journée Calcul Intensif, 2007, Villeneuve d'Ascq, France. ⟨hal-00285259⟩

• Communication dans un congrès

Simulation par dynamique moléculaire de la recristallisation d'une interface silicium amorphe

Christophe Krzeminski, Evelyne Lampin, Quentin Brulin

Journée Simulation Numérique, 2007, Paris, France. ⟨hal-00285258⟩

• Article dans une revue

Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors

A. Le Louarn, F. Kapche, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, Pascale Chenevier, N. Izard, M. F. Goffman, Jean-Philippe Bourgoin

High frequency capabilities of carbon nanotube field-effect transistors (CNTFETs) are investigated. Structures with a large number of single-walled carbon nanotubes were fabricated using dielecrophoresis to increase the density of nanotubes in the device channel. The authors obtained an intrinsic...

Applied Physics Letters, 2007, 90, pp.233108-1-3. ⟨10.1063/1.2743402⟩. ⟨hal-00255760⟩

• Article dans une revue

Characteristics of Al2O3/AllnN/GaN MOSHEMT

F Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M.A. Di Forte-Poisson, M. Knez, E. Delos, Christophe Gaquière, S.L. Delage, E. Kohn

Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩. ⟨hal-00283495⟩

• Article dans une revue

A blind modulation type detector for DPRS standard

Iyad Dayoub, A. Okassa-M'Foubat, R. Mvone, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 41, pp.225-241. ⟨10.1007/s11277-006-9140-8⟩. ⟨hal-00283515⟩

• Article dans une revue

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Francois Vaurette, J.P. Nys, B. Grandidier, C. Priester, D. Stiévenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.235435-1-6. ⟨10.1103/PhysRevB.75.235435⟩. ⟨hal-00283122⟩