Publicaciones

Affichage de 12811 à 12820 sur 16474


  • Article dans une revue

Diamond detectors for LYRA, the solar VUV radiometer on board PROBA2

A. Benmoussa, Jean-François Hochedez, U. Schühle, W. Schmutz, K. Haenen, Y. Stockman, A. Soltani, F. Scholze, U. Kroth, V. Mortet, A. Theissen, C. Laubis, M. Richter, S. Kollerc, J.M. Defise, S. Koizumi

New pin-photodiode and metal–semiconductor–metal (MSM) photoconductor devices based on diamond material have been produced showing high responsivity around 200 nm. LYRA, the Large Yield RAdiometer, will use such detectors for the first time for a solar physics space instrument. A set of measurement...

Diamond and Related Materials, 2006, 15 (4-8), pp.802-806. ⟨10.1016/j.diamond.2005.10.024⟩. ⟨hal-00127947⟩

  • Communication dans un congrès

Room temperature single-electron operation and fabrication of downscaled self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D. Bensahel

Materials Research Society Spring Meeting, MRS Spring 2006, 2006, San Francisco, CA, United States. ⟨hal-00244026⟩

  • Article dans une revue

Averaging and oversampling correlator receiver with input quantization

Jean-Michel Rouvaen, B. El Khaldi, Atika Rivenq, Yassin El Hillali

Digital Signal Processing, 2006, 16, pp.120-136. ⟨hal-00128166⟩

  • Article dans une revue

Behavior of a traveling-wave amplifier versus temperature in SOI technology

M. Si Moussa, C. Pavageau, P. Simon, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanhoenacker-Janvier

IEEE Transactions on Microwave Theory and Techniques, 2006, 54, pp.2675-2683. ⟨hal-00126520⟩

  • Article dans une revue

Compact-modeling solutions for nanoscale double-gate and gate-all-around MOSFETs

B. Iniguez, T.A. Fjeldly, A. Lazaro, Francois Danneville, M.J. Deen

IEEE Transactions on Electron Devices, 2006, 53, pp.2128-2142. ⟨hal-00126518⟩

  • Communication dans un congrès

Charge injection and transport through organic monolayer : some interface problems

D. Vuillaume

Electronic Structure and Processes of Molecular-Based Interfaces, ESPMI 06, 2006, Nagoya, Japan. ⟨hal-00127133⟩

  • Communication dans un congrès

Analyse physique de transistors HEMTs AlGaN/GaN élaborés avec la technologie field plate

Brahim Benbakhti, Michel Rousseau, J-C Gerbedoen, Jean-Claude de Jaeger

10èmes Journées de la Matière Condensée, Aug 2006, Toulouse, France. ⟨hal-00128165⟩

  • Article dans une revue

Role of interfaces on the direct tunneling and inelastic tunneling behaviors through metal/alkylsilane/silicon junctions

D. K. Aswal, C. Petit, G. Salace, David Guérin, S. Lenfant, J.V. Yakhmi, D. Vuillaume

Physica Status Solidi A (applications and materials science), 2006, 203, pp.1464-1469. ⟨hal-00127111⟩

  • Communication dans un congrès

Optoelectronic switch and memory devices based on polymer functionalized carbon nanotube transistors

J. Borghetti, Vincent Derycke, S. Lenfant, P. Chenevier, A. Filoramo, M. Goffman, D. Vuillaume, J.P. Bourgoin

Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127137⟩

  • Article dans une revue

Evidence of surface acoustic wave band gaps in the phononic crystals created on thin plates

X. Zhang, T. Jackson, E. Lafon, P. Deymier, Jerome O. Vasseur

Applied Physics Letters, 2006, 88, pp.041911-1-3. ⟨hal-00127836⟩