Publicaciones
Affichage de 12971 à 12980 sur 16474
Catalytic growth of silicon nanowires supported on high surface oxide substrates
D. Hourlier, P. Lefebvre, A. Addad, R.N. Vannier, P. Perrot
Matériaux 2006, 2006, Dijon, France. ⟨hal-00243979⟩
Raman spectroscopy and AFM characterization on individual Si-based nanowires
M. Marczak, M. Zdrojek, W. Gebicki, C. Jastrzebski, Thierry Melin, D. Hourlier
European Material Research Society Spring Meeting, E-MRS - IUMRS - ICEM 06, Symposium E : Science and Technology of Nanotubes and Nanowires, 2006, Nice, France. ⟨hal-00243973⟩
Water exclusion at the nanometer scale provides long term passivation of silicon(111) grafted with alkyl monolayers
P. Gorostiza, C. Henry de Villeneuve, Q.Y. Sun, F. Sanz, X. Wallart, Rabah Boukherroub, P. Allongue
Journal of Physical Chemistry B, 2006, 110, pp.5576-5585. ⟨hal-00127062⟩
On the crucial role of the insulator-semiconductor interface in organic thin film transistors
G. Horowitz, M. Mottaghi, P. Lang, F. Rodriguez, A. Yassar, S. Lenfant, D. Vuillaume
SPIE Annual Meeting, Symposium on Organic Field-Effect Transistors V, 2006, San Diego, CA, United States. ⟨hal-00127155⟩
Electromagnetic wave propagation in quasi-one-dimensional comb-like structures made up of dissipative negative-phase-velocity materials
Gregorio Hernandez-Cocoletzi, L. Dobrzynski, Bahram Djafari-Rouhani, Housni Al-Wahsh, Driss Bria
Journal of Physics: Condensed Matter, 2006, 18, pp.3683-3690. ⟨10.1088/0953-8984/18/15/014⟩. ⟨hal-00127835⟩
Running current through a single non resonant quantum state in silicon
Maxime Berthe, A. Urbieta, R. Stiufiuc, B. Grandidier, D. Deresmes, C. Delerue, D. Stiévenard, R. Rurrali, N. Lorente, L. Magaud, P. Ordejon
European Conference on Surface Science, ECOSS 24, 2006, Paris, France. ⟨hal-00127916⟩
Role of interfaces on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions
D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi
Materials Research Society Spring Meeting, 2006, San Francisco, CA, United States. ⟨hal-00127160⟩
Terahertz detection by GaN/AlGaN transistors
Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy
Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩
High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm
Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin
Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-00162819⟩
High laser-wavelength sensitivity of the picosecond ultrasonic response in transparent thin films
Arnaud Devos, J.F. Robillard, R. Côte, P. Emery
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 74, pp.064114-1-7. ⟨10.1103/PhysRevB.74.064114⟩. ⟨hal-00126493⟩