Publicaciones
Affichage de 15051 à 15060 sur 16474
Etude et réalisation de transducteurs millimétriques
Anne-Christine Hladky, S. Alkoy, D.C. Markley, R.J. Meyer, W.J. Hughes, J. Cochran, R.E. Newnham
2002, pp.256-259. ⟨hal-00147778⟩
Characterization of surface cracks in metals by microwave techniques
D. Glay, T. Lasri
2002, pp.50-52. ⟨hal-00147878⟩
AlGaN/GaN HEMT for RF power applications
Jean-Claude de Jaeger, Z. Bougria, S. Cassette, E. Chartier, Y. Cordier, Gilles Dambrine, E. Delos, M.A. Poisson, S. Delage, B. Dessertenne, D. Ducatteau, M. Elkhou, D. Floriot, Christophe Gaquière, Et Al.
10th European Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2002, 2002, Milano, Italy. ⟨hal-00149736⟩
Optimisation of abrupt emitter-base junction for heavily Be-doped InP/In0.53Ga0.47As heterojunction bipolar transistor
E. Lefebvre, M. Zaknoune, F. Mollot
14th Indium Phosphide and Related Materials Conference, IPRM 2002, 2002, Sweden. pp.615-618. ⟨hal-00250210⟩
Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates : influence of film thickness and orientation
T. Haccart, Eric Cattan, Denis Remiens
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.78-88. ⟨hal-00250395⟩
The linearisation of an electrostrictive device for MEMS applications
D. Jenkins, E. Fribourg-Blanc, Eric Cattan, Denis Remiens
13th IEEE International Symposium on Applications of Ferroelectrics, ISAF 2002, 2002, Japan. pp.479-482. ⟨hal-00250396⟩
Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers
D. Vignaud, Y. Cordier, P. Miska, D. Ferré
28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542. ⟨hal-00250216⟩
La sismique réflexion haute résolution, un outil pour la reconnaissance des couches superficielles
Bogdan Piwakowski, C. Leonard, I. Shahrour
Revue française de Géotechnique, 2002, 101, pp.23-33. ⟨10.1051/geotech/2002101023⟩. ⟨hal-00250179⟩
Réalisation technologique d’un transistor à effet de champ dans la filière GaN
B. Boudart
Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France. ⟨hal-01654488⟩