Publicaciones

Affichage de 8361 à 8370 sur 16462


  • Communication dans un congrès

[Invited] Terahertz near field microscopy

Tahsin Akalin

3rd International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2012, 2012, Paris, France. ⟨hal-00798872⟩

  • Chapitre d'ouvrage

Nanoscale FETs

O. Moldovan, A. Lazaro, Francois Danneville, R. Picos, B. Nae, B. Iniguez, M.J. Deen

Deen M.J. Advances in imaging and electron physics : Silicon-based millimeter-wave technology - Measurement, modeling and applications, Elsevier, volume 174, chapter 4, 261-347, 2012, ISBN 978-0-12-394298-2. ⟨10.1016/B978-0-12-394298-2.00004-1⟩. ⟨hal-00798924⟩

  • Article dans une revue

Elastic behaviour of inhomogeneities with size and shape different from their hosting cavities

S. Giordano, Pier Luca Palla, E. Cadelano, M. Brun

Mechanics of Materials, 2012, 44, pp.4-22. ⟨10.1016/j.mechmat.2011.07.015⟩. ⟨hal-00639826⟩

  • Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:...

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

  • Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

  • Article dans une revue

Honeycomb Photonic Crystal Waveguides in a Suspended Silicon Slab

Daniel Puerto, A. Griol, J.M. Escalante, Yan Pennec, Bahram Djafari-Rouhani, J.C. Beugnot, Vincent Laude, Alejandro Martínez

IEEE Photonics Technology Letters, 2012, 24, pp.2056. ⟨10.1109/LPT.2012.2219516⟩. ⟨hal-00759318⟩

  • Communication dans un congrès

Optimization of electrodes design for PZT thin-film actuated membranes

F. Casset, H. Michaud, T. Ricart, G. Le Rhun, M. Cueff, J. Abergel, P. Ancey, D. Faralli, Arnaud Devos, S. Fanget, E. Defay

This paper reports on the optimization of electrodes design for sol-gel Pb(Zr0.52, Ti0.48)O3 (PZT) thin-film actuated-membranes. PZT can be used in many actuator applications such as micro mirror, RF MEMS, inkjet or loudspeaker due to its strong piezoelectric properties. We aim to design membrane-...

26th European Conference on Solid-State Transducers, Eurosensors XXVI, Sep 2012, Kraków, Poland. pp.108-111, ⟨10.1016/j.proeng.2012.09.096⟩. ⟨hal-00801141⟩

  • Proceedings/Recueil des communications

LT GaAs nanophotoswitches for microwave sampling

Didier Decoster, Antoine Pagies, Jean-Francois Lampin, X. Wallart, Vincent Magnin, Joseph Harari, Charlotte Tripon-Canseliet, S. Faci, Stéphane Formont, Loic Ménager, Jean Chazelas, Guy Jestin

SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, 8268-83, 2012. ⟨hal-04444977⟩

  • Communication dans un congrès

Nucleation mechanisms of self-catalyzed nanowires on silicon

E. Russo-Averchi, J. Arbiol, E. Uccelli, P. Krogstrup, S. Conesa-Boj, A. Dalmau I Mallorqui, M. Heiss, D. Ruffer, J. Nygard, J.R. Morante, P. Caroff, A. Fontcuberta I Morral

6th Nanowire Growth Workshop, 2012, Saint Petersburg, Russia. ⟨hal-00797370⟩

  • Communication dans un congrès

Influence of Sb overpressure on the anisotropic transport properties of InAs/AlSb heterostructures grown on highly mismatched substrates

S. El Kazzi, L. Desplanque, Y. Wang, P. Ruterana, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium G : Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II, 2012, San Francisco, CA, United States. ⟨hal-00797368⟩