Publicaciones

Affichage de 3001 à 3010 sur 16551


  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 11/4]

Raffaele Pisano

2022. ⟨hal-04517903⟩

  • Communication dans un congrès

Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

H. Koussir, Isabelle Lefebvre, Maxime Berthe, Y. Chernukha, J. Tranchant, B. Corraze, Etienne Janod, Laurent Cario, B. Grandidier, Pascale Diener

The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a...

Strongly Correlated Electron Systems (SCES 2020), Sep 2021, Campinas, Brazil. Journal of Physics: Conference Series, Volume 2164, 012046, 4 p., ⟨10.1088/1742-6596/2164/1/012046⟩. ⟨hal-03753819⟩

  • Article dans une revue

Synthesis of Cyano-Benzylidene Xanthene Synthons Using a Diprotic Brønsted Acid Catalyst, and Their Application as Efficient Inhibitors of Aluminum Corrosion in Alkaline Solutions

Mohammed Amin, Gaber Mersal, Morad El-Hendawy, Abdallah Shaltout, Ali Badawi, Johan Boman, Adil Gobouri, Murat Saracoglu, Fatma Kandemirli, Rabah Boukherroub, Jacek Ryl, Mohamed Khalifa

Novel cyano-benzylidene xanthene derivatives were synthesized using one-pot and condensation reactions. A diprotic Brønsted acid (i.e., oxalic acid) was used as an effective catalyst for the promotion of the synthesis process of the new starting xanthene–aldehyde compound. Different xanthene...

Molecules, 2022, Chemistry of Corrosion Inhibitors, 27 (17), pp.5733. ⟨10.3390/molecules27175733⟩. ⟨hal-03778946⟩

  • Article dans une revue

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy

Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, M Diallo, Vanessa Avramovic, Kamel Haddadi, X. Wallart, L. Desplanque

In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and...

Nanotechnology, 2022, 33 (14), pp.145201. ⟨10.1088/1361-6528/ac45c5⟩. ⟨hal-03547003⟩