Publicaciones

• Chapitre d'ouvrage

Electronic properties of organic monolayers and molecular devices

D. Vuillaume

Deleonibus S. Electronic device architectures for the NANO-CMOS era - From ultimate CMOS scaling to beyond CMOS devices, Pan Stanford Publishing, pp.299-331, 2008. ⟨hal-00362364⟩

• Autre publication scientifique

Elaboration et caractérisations de films ferroélectriques relaxeurs de PMN-PT : intégration sur silicium et applications MEMS

M. Detalle

2008. ⟨hal-00362347⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the...

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

Journal of African Earth Sciences, 2008, pp.215-233. ⟨hal-00326270⟩

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction...

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Article dans une revue

Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

M. Detalle, Denis Remiens

Journal of Crystal Growth, 2008, 310, pp.3596-3603. ⟨10.1016/j.jcrysgro.2008.04.053⟩. ⟨hal-00360097⟩

• Article dans une revue

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, B. Beaumont, Z. Bougrioua

Vacuum, 2008, 82, pp.794-798. ⟨10.1016/j.vacuum.2007.11.005⟩. ⟨hal-00356985⟩

• Article dans une revue

Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires

A. Efremov, A. Klimovskaya, I. Prokopenko, Y. Moklyak, D. Hourlier

Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, pp.2446-2453. ⟨10.1016/j.physe.2008.01.015⟩. ⟨hal-00356959⟩

• Article dans une revue

Characterization of nanogap chemical reactivity using peptide-capped gold nanoparticles and electrical detection

L. Marcon, D. Stievenard, O. Melnyk

Bioconjugate Chemistry, 2008, 19, pp.802-805. ⟨10.1021/bc8000084⟩. ⟨hal-00357336⟩

• Article dans une revue

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

M. Mattalah, A. Telia, A. Soltani, Jean-Claude de Jaeger, P. Thevenin, A. Bath, B. Akkal, H. Abid

Thin Solid Films, 2008, 516, pp.4122-4127. ⟨10.1016/j.tsf.2007.10.009⟩. ⟨hal-00357796⟩