Publicaciones
Affichage de 14821 à 14830 sur 16471
A highly directive dipole antenna embedded in a Fabry-Perot type cavity
Tahsin Akalin, Jérôme Danglot, Olivier Vanbésien, Didier Lippens
IEEE Microwave and Wireless Components Letters, 2002, 12 (2), pp.48-50. ⟨10.1109/7260.982873⟩. ⟨hal-00148630⟩
Theory of acoustic scattering by supported ridges at a solid-liquid interface
Jerome O. Vasseur, A. Khelif, J. Vasseur, Ph. Lambin, Bahram Djafari-Rouhani, P. Deymier
Physical Review E , 2002, 65 (3), ⟨10.1103/PhysRevE.65.036601⟩. ⟨hal-03302025⟩
Micro-actionneurs en alliages à mémoire de forme
N. Chaillet, L. Buchaillot, J. Abadie, I. Roch, C. Lexcellent
CUGAT O. Micro-actionneurs électroactifs, Hermès Sciences, pp.179-223, 2002. ⟨hal-00132049⟩
Magnonic spectral gaps and discrete transmission in serial loop structures
A Mir, H Al Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur
Journal of Physics: Condensed Matter, 2002, 14 (3), pp.637-655. ⟨10.1088/0953-8984/14/3/331⟩. ⟨hal-03302129⟩
Ferroelectric (116) SrBi2Nb2O9 thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) SrTiO3 electrode
Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Eric Cattan, Caroline Soyer, Denis Remiens
Applied Physics Letters, 2002, 81 (11), pp.2067-2069. ⟨10.1063/1.1504179⟩. ⟨hal-00149629⟩
Conception et réalisation d'un séparateur acousto-optique de polarisation
A. Sakkour
2002. ⟨hal-00162705⟩
From nanoelectronics to nanotechnology
Emmanuel Dubois
Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩
On the physical interest of some numerical methods for wave phase conjugation in active media
A. Merlen, Vladimir Preobrazhensky, Philippe Pernod
2002, pp.208. ⟨hal-00148692⟩
High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz
N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs
2002, 4 pp. ⟨hal-00149700⟩
Analyse physique des HEMTs à base de nitrure de gallium
M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger
GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩