Publicaciones
Affichage de 15771 à 15780 sur 16472
Emissivity and its influence on quantitative retrieval of temperature in microwave radiometry mammography (MRM)
Bertrand Bocquet, J.C. van de Velde, Roger Ringot, E. Constant
Progress in Electromagnetics Research Symposium, PIERS 2000, Jul 2000, Cambridge, MA, United States. ⟨hal-00158178⟩
Underground tunnels detection and location by high resolution seismic reflection
Bogdan Piwakowski, C. Leonard
5th International Symposium on Non-Destructive Testing in Civil Engineering, NDT-CE 2000, 2000, Japan. pp.415-425. ⟨hal-00250442⟩
Convertisseur de polarisation avec contrôle de phase intégré sur semiconducteur III-V de type AIGaAs/GaAs
N. Grossard, H. Porte, Jean-Pierre Vilcot, J.P. Goedgebuer
20èmes Journées Nationales d'Optique Guidée, 2000, Toulouse, France. ⟨hal-00158597⟩
Temperature control by microwave radiometry with narrow bandwidth
Luc Dubois, C. Vanoverschelde, V. Thomy, J.P. Sozanski, M. Chive
European Physical Journal: Applied Physics, 2000, 9, pp.63-68. ⟨hal-00158150⟩
Kinetics of oxydation by scanning probe microscopy : a space-charge-limited model
Emmanuel Dubois, J.L. Bubendorff
Journal of Applied Physics, 2000, 87, pp.8148-8154. ⟨10.1063/1.373510⟩. ⟨hal-00158510⟩
Low field anisotropic magnetostriction of single domain exchange-coupled (TbFe/Fe) multilayers
Henri Le Gall, Jamal Ben Youssef, F. Socha, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod
Journal of Applied Physics, 2000, 87, pp.5783-5785. ⟨10.1063/1.372521⟩. ⟨hal-00158455⟩
Modelling of ohmic contacts in Monte Carlo simulation of heterostructure devices
F. Dessenne, Jean-Luc Thobel, P. Chevalier, R. Fauquembergue
12th III-V Semiconductor Device Simulation Workshop, 2000, Duisburg, Germany. ⟨hal-00158225⟩
Monte Carlo simulator for the design optimization of low-noise HEMTs
J. Mateos-Lopez, T. Gonzalez, D. Pardo, Virginie Hoel, A. Cappy
IEEE Transactions on Electron Devices, 2000, 47, pp.1950-1956. ⟨hal-00157878⟩