Publicaciones
Affichage de 7641 à 7650 sur 16455
Effet des contraintes sur les propriétés électroniques de jonctions moléculaires sur nanocristaux d'or de taille inférieure à 10 nm
N. Clement, S. Desbief, K. Smaali, J.P. Nys, P. Leclere, D. Vuillaume
Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878939⟩
Organic/nanoparticles synapstor (synapse-transistor) for neuro-inspired computing architecture and biocompatible synapse prosthesis
S. Desbief, A. Kyndiah, M. Murgia, T. Cramer, F. Biscarini, David Guérin, S. Lenfant, F. Alibart, D. Vuillaume
12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878799⟩
Towards an ab-initio description of the charge transfer between a proton and a lithium fluoride surface : a quantum chemistry approach
P. Tiwald, S. Gräfe, J. Burgdörfer, L. Wirtz
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013, 317, pp.18-22. ⟨10.1016/j.nimb.2012.12.097⟩. ⟨hal-00913584⟩
Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors
H. Mosbahi, M. Gassoumi, H. Mejri, I. Saidi, Christophe Gaquière, M.A. Zaidi, H. Maaref
Current Applied Physics, 2013, 13, pp.1359-1364. ⟨10.1016/j.cap.2013.04.003⟩. ⟨hal-00872006⟩
Substrate mode-integrated SPR sensor
C. Lenaerts, Jean-Pierre Vilcot, J. Hastanin, B. Pinchemel, Sophie Maricot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, J. Hottin, C. Desfours, K. Fleury-Frenette
Plasmonics, 2013, 8, pp.1203-1208. ⟨10.1007/s11468-013-9533-y⟩. ⟨hal-00823963⟩
News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning
L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert
European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩
Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors
N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume
22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩
Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique
Floriane Leroy, Anthony Rousseau, Sandrine Payan, El Hadj Dogheche, David Jenkins, Didier Decoster, Mario Maglione
Optics Letters, 2013, 38 (7), pp.1037-1039. ⟨10.1364/OL.38.001037⟩. ⟨hal-00804978⟩
Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref
Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩
22 Gbps wireless communication system at 0.4 THz
Guillaume Ducournau, P. Szriftgiser, Fabio Pavanello, Philipp Latzel, Alexandre Beck, Tahsin Akalin, Emilien Peytavit, Mohammed Zaknoune, Denis Bacquet, Jean-Francois Lampin
38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2013, Mainz, Germany. ⟨10.1109/IRMMW-THz.2013.6665491⟩. ⟨hal-03286171⟩