Publicaciones

• Communication dans un congrès

Effets du facteur d'émission spontanée et de la densité de courant sur le temps de retard des lasers à cascades quantiques

A. Hamadou, D. Nehari, S. Lamari, Jean-Luc Thobel

International Conference on Optics, Photonics and their Applications, ICOPA 2010, 2010, Algiers, Algérie. ⟨hal-00591741⟩

• Communication dans un congrès

Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Sylvain Laurent, Antonio Augusto Lisboa de Souza, Jean-Christophe Nallatamby, Michel Prigent, Virginie Nodjiadjim, Muriel Riet

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of...

Workshop on (INMMIC) 2010, Apr 2010, Göteborg, Sweden. pp.54-57, ⟨10.1109/INMMIC.2010.5480139⟩. ⟨hal-00606461⟩

• Communication dans un congrès

Caractérisation Ultrasonore de Plaques PoroViscoElastiques à l'Aide des Termes de Transition

Serge Derible, Pierre Campistron, Georges Freiha, Hervé Franklin, Bertrand Nongaillard

Nous présentons les résultats de la mesure des termes de transition, issus des coefficients de réflexion et de transmission d'une onde acoustique par et à travers des plaques poreuses. Ces termes permettent de séparer les contributions symétriques et anti symétriques des vibrations des...

10ème Congrès Français d'Acoustique, Apr 2010, Lyon, France. ⟨hal-00551191⟩

• Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,...

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

• Article dans une revue

Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

Freddy Ponchel, Jean-François Legier, Caroline Soyer, Denis Remiens, Jean Midy, Tuami Lasri, Guillaume Guéguan

400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1µm slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz....

Applied Physics Letters, 2010, 96, pp.252906-1-3. ⟨10.1063/1.3454772⟩. ⟨hal-00549520⟩

• Article dans une revue

Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors

Rachid Bouregba, N. Sama, Caroline Soyer, Gilles Poullain, Denis Remiens

Dielectric, hysteresis and fatigue measurements are performed on Pb(Zr0.54Ti0.46)O3 (PZT) thin film capacitors with different thicknesses and different electrode configurations, using platinum and LaNiO3 conducting oxide. The data are compared with those collected in a previous work devoted to...

Journal of Applied Physics, 2010, 107, pp.104102-1-9. ⟨10.1063/1.3380837⟩. ⟨hal-00549521⟩

• Article dans une revue

Two-dimensional Legendre polynomial modeling of composite bulk acoustic wave resonators

A. Raherison, Jean-Etienne Lefebvre, F.E. Ratolojanahary, L. Elmaimouni, Tadeusz Gryba

A bidimensional analysis of 6 mm hexagonal resonators is described using a double orthonormal basis set for the expansion of field quantities. The analysis takes into account the electrical voltage source and by means of a unique formalism along with a single calculation restitutes all the types of...

Journal of Applied Physics, 2010, 108 (10), pp.104904. ⟨10.1063/1.3504611⟩. ⟨hal-00549534⟩

• Communication dans un congrès

Towards cell characterization by THz BioMEMS

Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

Journées Nationales Communes du GDR Micro et Nano Fluidique et du Club Micro Capteurs Chimiques, 2010, Villeneuve d'Ascq, France. ⟨hal-00574491⟩

• Article dans une revue

Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy

H. Mosbahi, M. Gassoumi, Christophe Gaquière, M.A. Zaidi, H. Maaref

Optoelectronics and Advanced Materials - Rapid Communications, 2010, 4, pp.1783-1785. ⟨hal-00567897⟩

• Article dans une revue

Characterization of ytterbium silicide formed in ultra high vacuum

Adam Laszcz, Jacek Ratajczak, Andrzej Czerwinski, Jerzy Katcki, Vesna Srot, Fritz Phillipp, Peter A. van Aken, Dmitri Yarekha, Nicolas Reckinger, Guilhem Larrieu, Emmanuel Dubois

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions...

Journal of Physics: Conference Series, 2010, 209 : 16th International Conference on Microscopy of Semiconducting Materials, pp.012056 (1--4). ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩