Publicaciones

Affichage de 11561 à 11570 sur 16122


  • Article dans une revue

Comparison between the noise performance of double- and single-gate InP-based HEMTs

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE Transactions on Electron Devices, 2008, 55, pp.1535-1540. ⟨10.1109/TED.2008.921982⟩. ⟨hal-00356667⟩

  • Communication dans un congrès

InAlN HEMTs - Design - Technology - Performance

E. Kohn, M. Alomari, F Medjdoub, S. Delage, M.A. Poisson, N. Grandjean, J.F. Carlin, A. Konstantinidis, C. Giesen, Christophe Gaquière

Lester Eastman Conference on High Performance Devices, 2008, Newark, DE, United States. ⟨hal-00362033⟩

  • Communication dans un congrès

Electromagnetic actuation based on MEMS technology for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

6th International EuroHaptics Conference, EuroHaptics 2008, 2008, Spain. pp.437-446. ⟨hal-00360396⟩

  • Communication dans un congrès

Development of a suitable PML for an harmonic study of a finite 1D phononic crystal

M. Bavencoffe, B. Morvan, Anne-Christine Hladky, Olivier Bou Matar, J.L. Izbicki

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00361489⟩

  • Article dans une revue

Wet-chemical approach for the halogenation of hydrogenated boron-doped diamond electrodes

Mei Wang, Manash R. Das, Vera G. Praig, François Le Normand, Musen Li, Rabah Boukherroub, Sabine Szunerits

Brominated and chlorinated boron-doped diamond electrodes were prepared through a radical substitution reaction and reacted further with alkyl-Grignard reagents.

Chemical Communications, 2008, 47, pp.6294-6296. ⟨10.1039/b810975c⟩. ⟨hal-00417517⟩

  • Article dans une revue

Power dissipated measurement of an ultrasonic generator in a viscous medium by flowmetric method

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2008, 15, pp.973-980. ⟨10.1016/j.ultsonch.2008.03.005⟩. ⟨hal-00356988⟩

  • Article dans une revue

Electromagnetic compatibility analysis of unstructured mains networks for high-speed data transmission : part 2

S. Battermann, H. Garbe, F. Silva, M. Pous, V. Beauvois, K. Vantomme, J. Catrysse, J. Newbury, Virginie Degardin, M. Liénard, Pierre Degauque, I.D. Flintoft, A.D. Papatsoris, D.W. Welsh, A.C. Marvin

IET Science Measurement and Technology, 2008, 2, pp.154-159. ⟨10.1049/iet-smt:20070056⟩. ⟨hal-00360049⟩

  • Article dans une revue

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, Raphaël Aubry, Christophe Gaquière

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model...

International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩

  • Communication dans un congrès

Fabrication and characterization of proton-exchanged waveguide on X-cut LiNbO3

G.Y. Sia, J.H. Teng, A.J. Danner, El Hadj Dogheche, R. Yin, S.S. Ang, A.B. Chew, M.Y. Lai, A. Gokarna, A. Stolz, Didier Decoster, S.Y. Tan

IEEE Photonics Global 2008, IPGC 2008, 2008, _, Singapore. pp.1-4, ⟨10.1109/IPGC.2008.4781358⟩. ⟨hal-00800976⟩