Publicaciones

• Communication dans un congrès

Ondes de Lamb dans une plaque comportant une interface striée avec plusieurs périodicités spatiales

Damien Leduc, Anne-Christine Hladky, Bruno Morvan, Jean-Louis Izbicki, Pascal Pareige

La propagation d'ondes de Lamb dans une plaque comportant une interface striée est étudiée. Lorsque le profil ne comporte qu'une périodicité spatiale alors un mode réflechi-converti peut être observé. Le nombre d'onde de ce mode réflechi-converti est déterminé dans le plan nombre d...

17e Congrès Français de Mécanique, Aug 2005, Troyes, France. ⟨hal-04090910⟩

• Article dans une revue

Anisotropy-induced polarization mixture of surface acoustic waves in Ga N ∕ c -sapphire heterostructures

J. Pedrós, F. Calle, J. Grajal, R. Jiménez Riobóo, Y. Takagaki, K. Ploog, Z. Bougrioua

The characteristics of surface acoustic waves (SAWs) in GaN layers grown on c-plane sapphire are investigated. Besides Rayleigh mode, Sezawa and Love modes, which are confined in the nitride layers, arise because of the slow sound propagation in GaN compared with the substrate. In addition, pseudo-...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 72 (7), ⟨10.1103/PhysRevB.72.075306⟩. ⟨hal-02906694⟩

• Communication dans un congrès

High fractionally spaced constant modulus blind equalization for high order-QAM signalling

A. Zaouche, Iyad Dayoub, Jean-Michel Rouvaen

2005 Microwave Electronics: Measurements, Identification, Applications, Jul 2005, Bordeaux, France. pp.197-202, ⟨10.1109/SSP.2005.1628590⟩. ⟨hal-03383099⟩

• Thèse

Croissance métamorphique par Epitaxie par Jets Moléculaires et caractérisations physiques pour Transistor Bipolaire à Hétérojonction InP/InGaAs sur GaAs, Metamorphic growth by Molecular Beam Epitaxy and physical characterizations for InP/InGaAs Heterojunction Bipolar Transistor on GaAs

Eric Lefebvre

Les Transistors Bipolaires à Hétérojonction fonctionnent à hautes fréquences sous des tensions d'environ 5V, en particulier dans le système de matériaux InP/InGaAs. Il est souhaitable d'obtenir ces performances non pas sur InP mais sur GaAs, substrat plus robuste, disponible en taille..., Heterojunction Bipolar Transistors currently operate at high frequencies under voltage of approximately 5V, in particular in the InP/InGaAs materials system. It is desirable to obtain these performances on GaAs rather than on InP substrates, because GaAs ones are more reliable, available in higher...

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00070835⟩

• Article dans une revue

Truly Quantitative XPS Characterization of Organic Monolayers on Silicon: Study of Alkyl and Alkoxy Monolayers on H−Si(111)

Xavier Wallart, Catherine Henry de Villeneuve, Philippe Allongue

The quantitative characterization of the chemical composition (bonding at grafted and ungrafted sites, surface coverage) is a key issue for the application of silicon-organic monolayer hybrid interfaces. The primary purpose of this article is to demonstrate that X-ray photoelectron spectroscopy (...

Journal of the American Chemical Society, 2005, 127 (21), pp.7871-7878. ⟨10.1021/ja0430797⟩. ⟨hal-04166388⟩

• Article dans une revue

Dielectric characterization in a broad frequency and temperature range of SrBi2Nb2O9 thin films grown on Pt electrodes

Maryline Guilloux-Viry, Jean-René Duclere, A. Rousseau, A. Perrin, Didier Fasquelle, Jean-Claude Carru, Eric Cattan, Caroline Soyer, Denis Remiens

Ferroelectric and dielectric characteristics of two types of SrBi2Nb2O9 thin films grown by pulsed laser deposition on Pt electrodes were determined: a randomly oriented SrBi2Nb2O9 film (sample A), grown on a so-called polycrystalline Pt/Ti/SiO2/Si (Pt/Si) and an epitaxial SrBi2Nb2O9 film (sample B...

Journal of Applied Physics, 2005, 97 (11), pp.114102. ⟨10.1063/1.1904726⟩. ⟨hal-00130820⟩

• Article dans une revue

Package-free infrared micro sensor using polysilicon thermopile

Mohamed Boutchich, Katir Ziouche, M. Ait-Hammouda Yala, Pascale Godts, Didier Leclercq

In this paper, a new IR thermal micro sensor using an original design and silicon micro technology is presented. The operating principle of the sensor is based on the Seebeck effect. A high thermoelectric power thermopile has been developed using thermoelectric properties of phosphorus and boron...

Sensors and Actuators A: Physical , 2005, 121 (1), pp.52-58. ⟨10.1016/j.sna.2005.01.016⟩. ⟨hal-00125621⟩

• Article dans une revue

Characterization of InP semiconductor waveguides coupled to disk microcavity optical resonators via opto-microwave technique

P. Miska, M. Beaugeois, C. Lethien, A. Beaurain, H.-W. Li, J.-P. Vilcot, D. Decoster, J. Chazelas, M. Bouazaoui, Leonard Dobrzynski, Abdellatif Akjouj, B. Djafari-Rouhani, J.-O. Vasseur

Microwave and Optical Technology Letters, 2005, 45 (4), pp.315-317. ⟨10.1002/mop.20808⟩. ⟨hal-04070917⟩

• Article dans une revue

Characterization of InP semiconductor waveguides coupled to disk microcavity optical resonators via opto-microwave technique

Patrice Miska, Maxime Beaugeois, C. Lethien, Arnaud Beaurain, Hongwu Li, Jean-Pierre Vilcot, Didier Decoster, Jean Chazelas, Mohamed Bouazaoui, L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur

We report on the opto-microwave characterization of InP waveguide-coupled to microcavity disk resonators. The lateral waveguide confinement is obtained by deep inductively-coupled plasma reactive-ion etching (ICP-RIE) through the guiding layer. We demonstrate the propagation of microwaves on an...

Microwave and Optical Technology Letters, 2005, 45 (4), pp.315-317. ⟨10.1002/mop.20808⟩. ⟨hal-03302278⟩

• Communication dans un congrès

The origin of the cycle by Sadi Carnot and Volta's battery

Raffaele Pisano

AIF Workshop Science & Teaching, 19th May, AIF Latina & ITG Sani Latina, May 2005, Latina, Italy. ⟨hal-04518911⟩