Publicaciones
Affichage de 13341 à 13350 sur 16125
230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications
P. Chevalier, C. Fellous, L. Rubaldo, F. Pourchon, S. Pruvost, R. Beerkens, F. Saguin, N. Zerounian, B. Barbalat, Sylvie Lepilliet, D. Dutartre, D. Celi, I. Telliez, D. Gloria, And Al
IEEE Journal of Solid-State Circuits, 2005, 40, pp.2025-2034. ⟨hal-00125135⟩
On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs
R. Rengel, M.J. Martin, G. Pailloncy, Gilles Dambrine, Francois Danneville
2005, pp.745-748. ⟨hal-00125309⟩
Dual-wavelength multimode fibre transmission of digital and RF signals
C. Sion, A. Roche, A. da Costa de Matos, Christophe Loyez, C. Lethien, R. Hamelin, Jean-Pierre Vilcot
12th NEFERTITI Workshop PWCom, 2005, Sähörus, Sweden. ⟨hal-00125337⟩
94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP
F Medjdoub, M. Zaknoune, X. Wallart, Christophe Gaquière, D. Theron
Electronics Letters, 2005, 41, pp.63-64. ⟨hal-00126459⟩
Simulation Monte Carlo du transport quantique dans les dispositifs optoélectroniques à transistions inter-sous-bandes
Olivier Bonno, Jean-Luc Thobel, François Dessenne
1ères Journées du GDR Térahertz, 2005, Montpellier, France. ⟨hal-00125904⟩
Electron emission from surfaces induced by HCI and lasers
C. Lemell, X.M. Tong, K. Tokesi, L. Wirtz, J. Burgdorfer
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2005, 235, pp.425-430. ⟨hal-00126427⟩
A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s optical receivers
G. Wolf, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine, H. Happy
2005, pp.93-95. ⟨hal-00125302⟩
Growth on nanomesas as a template for perfect lateral organization of semiconductor Quantum Dots : early stages of capping process and role of stressors
C. Meynier, C. Priester
Self-Organised Nanostructures, 2005, Cargese, France. ⟨hal-00125388⟩
First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière
Microwave and Optical Technology Letters, 2005, 46, pp.311-315. ⟨hal-00126457⟩
Strained heteroepitaxy on nanomesas : a way toward perfect lateral organization of quantum dots
C. Priester, M. Bavencoffe, E. Houdard
Journal of Crystal Growth, 2005, 275, pp.305-316. ⟨hal-00125383⟩