Publicaciones

Affichage de 13651 à 13660 sur 16125


  • Article dans une revue

Hot carrier aging degradation phenomena in GaN based MESFETs

F. Rampazzo, G. Pierobon, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni

Microelectronics Reliability, 2004, 44, pp.1375-1380. ⟨hal-00154890⟩

  • Communication dans un congrès

RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current

Francois Danneville, G. Pailloncy, Gilles Dambrine, B. Iniguez

2004, pp.103-110. ⟨hal-00154886⟩

  • Article dans une revue

Versatile bondpad report process for non-planar compound semiconductor devices

S. Garidel, Jean-Pierre Vilcot, M. Zaknoune, P. Tilmant

Microelectronic Engineering, 2004, 71, pp.358-362. ⟨hal-00162776⟩

  • Communication dans un congrès

Dispositif automatique pour le contrôle non destructif du béton par ondes de surface

Bogdan Piwakowski

Diagnobéton 2004, 2004, Montreal, Canada. ⟨hal-00248104⟩

  • Communication dans un congrès

Fabrication and creep behavior of SiCN(O) nanocomposites

Mohamed Amara, R. Dez, Sylvie Foucaud, D. Bahloul-Hourlier, P. Goursat, Nathalie Herlin-Boime

4th International Symposium on Nitrides, 2004, Belgium. pp.281-285. ⟨hal-00248025⟩

  • Article dans une revue

Sign reversal and tunable rectification in a ballistic nanojunction

B. Hackens, L. Gence, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Applied Physics Letters, 2004, 85, pp.4508-4510. ⟨hal-00133885⟩

  • Communication dans un congrès

A non uniform thermal de-embedding approach for cryogenic on-wafer high frequency noise measurements

S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Sylvie Lepilliet, C. Laporte, J.P. Fraysse, M. Maignan

2004, pp.1809-1812. ⟨hal-00133882⟩

  • Communication dans un congrès

Electrical Performance of Single and Coupled Cu Interconnects for the 70 nm Technology

K. El Bouazzati, Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

This paper deals with propagation delay, rise time and crosstalk for Cu wire of 100 nm width and 2.2 to 1.7 aspect ratio AR ( AR /spl sime/ h/w) in single and coupled configuration. Electrical and electromagnetical characteristics are predicted, with a full wave analysis, for various wire...

SPI: Signal Propagation on Interconnects, May 2004, Heidelberg, Germany. pp.189-191, ⟨10.1109/SPI.2004.1409048⟩. ⟨lirmm-00108848⟩

  • Communication dans un congrès

Modélisation et simulation de la technologie des MOS ultimes

Evelyne Lampin, Christophe Krzeminski, Tahsin Akalin, V. Cuny

Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00141007⟩