Publicaciones

• Article dans une revue

Numerical and experimental analysis of second order effects and loss mechanisms in axisymmetrical cavities

C. Campos-Pozuelo, L. Elvira-Segura, Bertrand Dubus

Journal of the Acoustical Society of America, 2004, 115, pp.1973-1981. ⟨hal-00133846⟩

• Communication dans un congrès

Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure

J.S. Galloo, Yannick Roelens, S. Bollaert, E. Pichonat, X. Wallart, A. Cappy, J. Mateos, T. Gonzales

2004, pp.219-222. ⟨hal-00133884⟩

• Communication dans un congrès

Cavitation bubble structures in low and high intensity ultrasonic fields

A. Moussatov, C. Granger, Bertrand Dubus, R. Mettin, T. Tervo, W. Lauterborn

Anglo-French Physical Acoustics Conference, 2004, Wye, United Kingdom. ⟨hal-00133856⟩

• Communication dans un congrès

Technologie pour dispositifs AlInAs/GaInAs

J.S. Galloo, E. Pichonat, S. Bollaert, Yannick Roelens, X. Wallart, A. Cappy

GDR Nanoélectronique, 2004, Aussois, France. ⟨hal-00133917⟩

• Communication dans un congrès

Démultiplexeur nanométriques à plasmons

Maxime Beaugeois, L. Dobrzynski, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, Mohamed Bouazaoui, Jean-Pierre Vilcot, J.P. Vigneron

GDR Ondes, 2004, Orsay, France. ⟨hal-00141207⟩

• Article dans une revue

Low-loss InGaAsP/InP submicron optical waveguides fabricated by ICP etching

Samuel Dupont, Arnaud Beaurain, Patrice Miska, Malek Zegaoui, Jean-Pierre Vilcot, Hongwu Li, M. Constant, Didier Decoster, Jean Chazelas

The fabrication and characterisation of low-loss InGaAsP/InP optical submicron waveguides made with ICP etching is reported. Their width ranges from 0.2 to 2 μm. For the 0.5 μm width, the propagation losses at λ=1.55 μm as low as 4.2 dB/mm have been measured.

Electronics Letters, 2004, 40, pp.865-866. ⟨hal-00141187⟩

• Communication dans un congrès

P-τ transfromation as the efficient tool for determination of the velocity dispersion characteristics in complex structures

Bogdan Piwakowski, M. Goueygou, A. Fnine, F. Buyle-Bodin

16th World Conference on Non Destructive Testing, WCNDT 2004, 2004, Canada. pp.1-8. ⟨hal-00248102⟩

• Article dans une revue

Electrical characterization of Au/n-GaN Schottky diodes.

B. Akkal, Z. Benamara, H. Abid, A. Talbi, Bernard Gruzza

Materials Chemistry and Physics, 2004, pp.31. ⟨hal-00272575⟩

• Article dans une revue

Raman characterization of Mg⁺ ion-implanted GaN

B. Boudart, Y. Guhel, J.C. Pesant, P. Dhamelincourt, M.A. Poisson

Mg+ ions were implanted at room temperature in n-type hexagonal GaN for the device isolation purposes. The implantation dose varied from 7.5 × 1012 to 1016 ions cm-2. We performed resonance Raman spectroscopy and DC electrical measurements in order to monitor the structural and electrical changes...

• Communication dans un congrès

A computational model for the Si/C/N nanopowder

Mohamed Amara, M. El Ganaoui, D. Hourlier

21st International Congress of Theoretical and Applied Mechanics, ICTAM04, 2004, Warsaw, Poland. ⟨hal-00248023⟩