Publicaciones

• Communication dans un congrès

Novel 2D interfaces for nanoelectrospray mass spectrometry

S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando

2004, pp.316-319. ⟨hal-00140770⟩

• Article dans une revue

AlGaN/GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

A. Minko, Virginie Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, Christophe Gaquière, D. Theron, Jean-Claude de Jaeger, H. Lahreche, L. Wedzikowski, R. Langer, P. Bove

IEEE Electron Device Letters, 2004, 25, pp.453-455. ⟨hal-00141952⟩

• Autre publication scientifique

Mise en œuvre de l'épitaxie par jets moléculaires pour la synthèse de diamant monocristallin

T. Gehin

2004. ⟨hal-00133960⟩

• Communication dans un congrès

Nonlinear noise modeling in FETs for the design of low noise active mixers

Francois Danneville

IEEE MTT-S International Microwave Symposium, Workshop on System-Level Measurement, Modelling, and Design Issues of Mixers, 2004, Fort Worth, TX, United States. ⟨hal-00133911⟩

• Article dans une revue

Schottky-barrier source/drain MOSFETs on ultra-thin silicon-on-insulator body with a tungsten metallic midgap gate

G. Larrieu, Emmanuel Dubois

This letter presents a simple low-temperature process to fabricate Schottky-barrier (SB) MOSFETs that integrates a midgap metallic gate (tungsten). The device architecture is based on a thin (10 nm) and lowly doped silicon-on-insulator film that provides a threshold voltage of -0.3 V independent on...

IEEE Electron Device Letters, 2004, 25, pp.801-803. ⟨10.1109/LED.2004.838053⟩. ⟨hal-00140981⟩

• Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron...

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

• Article dans une revue

PZT polarization voltage effects on off-centered PZT patch actuating silicon membrane

M. Guirardel, C. Bergaud, Eric Cattan, Denis Remiens, B. Belier, S. Petitgrand, A. Bosseboeuf

Sensors and Actuators A: Physical , 2004, 110, pp.385-389. ⟨hal-00141180⟩

• Article dans une revue

Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : an analytical model for quantitative charge imaging

Thierry Melin, H. Diesinger, D. Deresmes, D. Stievenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69, pp.035321/1-8. ⟨hal-00141248⟩

• Article dans une revue

Effect of quantum confinement on the dielectric constant of PbSe

Zeger Hens, Daniel Vanmaekelbergh, Ernst Stefan Kooij, Herbert Wormeester, Guy Allan, Christophe Delerue

Monolayers of lead selenide nanocrystals of a few nanometers in height have been made by electrodeposition on a Au(111) substrate. These layers show a thickness-dependent dielectric function, which was determined using spectroscopic ellipsometry. The experimental results are compared with...

Physical Review Letters, 2004, 92, pp.026808/1-4. ⟨10.1103/PhysRevLett.92.026808⟩. ⟨hal-00141244⟩

• Article dans une revue

Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED

E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.95-99. ⟨hal-00140975⟩