Publicaciones

Affichage de 14091 à 14100 sur 16309


  • Communication dans un congrès

MIMO techniques for improving capacity and robustness of wireless communications in railway tunnels

M. Lienard, Pierre Degauque

Proceedings of the Cost 286 Meeting on EMC in Diffused Communications Systems, 2004, Hamburg, Germany, Germany. ⟨hal-00142325⟩

  • Article dans une revue

Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs

L. Desplanque, Jean-Francois Lampin, F. Mollot

Applied Physics Letters, 2004, 84, pp.2049-2051. ⟨hal-00018499⟩

  • Communication dans un congrès

Determination by indentation method of sputtered PZT films mechanical parameters for Si-MEMS applications

Patrick Delobelle, Olivier Guillon, E. Fribourg-Blanc, Caroline Soyer, Denis Remiens, Eric Cattan

2004. ⟨hal-00020029⟩

  • Communication dans un congrès

Modélisation de bruit et performances de MOSFETs SOI totalement désertés

G. Pailloncy, B. Iniguez, Gilles Dambrine, M. Dehan, J.P. Raskin, H. Matsuhashi, P. Delatte, Francois Danneville

Workshop Action Spécifique Bruit, 2004, La Grande Motte, France. ⟨hal-00133915⟩

  • Communication dans un congrès

Nonlinear noise modeling in FETs for the design of low noise active mixers

Francois Danneville

IEEE MTT-S International Microwave Symposium, Workshop on System-Level Measurement, Modelling, and Design Issues of Mixers, 2004, Fort Worth, TX, United States. ⟨hal-00133911⟩

  • Communication dans un congrès

Simulation Monte Carlo de la dynamique électronique dans les dispositifs optoélectroniques à transitions inter-sous-bandes

Jean-Luc Thobel, Olivier Bonno, François Dessenne

9èmes Journées de la Matière Condensée, JMC9, 2004, Nancy, France. ⟨hal-00133959⟩

  • Autre publication scientifique

Mise en œuvre de l'épitaxie par jets moléculaires pour la synthèse de diamant monocristallin

T. Gehin

2004. ⟨hal-00133960⟩

  • Communication dans un congrès

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron...

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

  • Communication dans un congrès

Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devices

Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, Jean-Claude de Jaeger, Marie Germain, S. Delage, Jacques Graffeuil

European Microwave Week, 2004, Amsterdam, Netherlands. ⟨hal-00141963⟩