Publicaciones

• Article dans une revue

PMNT films for integrated capacitors

E. Fribourg-Blanc, Eric Cattan, Denis Remiens, E. Defaÿ

Solid-State Electronics, 2003, 47, pp.1631-1635. ⟨hal-00146475⟩

• Autre publication scientifique

Intégration et caractérisation physique de nanostructures pour les technologies de l'information et de la communication. Application au filtrage électromécanique dans la gamme des radio-fréquences (0,8-2,4GHz)

Vincent Agache

2003. ⟨hal-00146419⟩

• Communication dans un congrès

Very low Schottky barrier to n-type silicon with PtEr-stack silicide

Xing Tang, J. Katcki, Emmanuel Dubois, J. Ratajczak, G. Larrieu, P. Loumaye, O. Nicole, V. Bayot

2003, pp.99-104. ⟨hal-00146416⟩

• Article dans une revue

Measurement of semiconductor optical index variation in photonic devices based on optical heterodyning microwave experiments

Samuel Dupont, Karine Blary, Jean-Pierre Vilcot, Didier Decoster, Hongwu Li, Jean Chazelas

Electronics Letters, 2003, 39, pp.295-296. ⟨hal-00146499⟩

• Communication dans un congrès

Arabic isolated word recognition using general regression neural network

A. Amrouche, Jean-Michel Rouvaen

2003, pp.689-692. ⟨hal-00154885⟩

• Article dans une revue

Formation of Pt-based silicide contacts : kinetics, stochiometry and current drive capabilities

Guilhem Larrieu, Emmanuel Dubois, X. Wallart, Xavier Baie, J. Katcki

A detailed analysis of the formation of Pt2Si and PtSi silicides is proposed, based on x-ray photoelectron spectroscopy ~XPS!, transmission electron microscopy ~TEM!, and electrical characterizations. Published kinetics of the Pt2Si and PtSi transformations under ultrahigh vacuum condition are...

Journal of Applied Physics, 2003, 94 (12), pp.7801-7810. ⟨10.1063/1.1605817⟩. ⟨hal-00146394⟩

• Article dans une revue

Path delay model based on stable distribution for the 60GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

IEEE GLOBECOM, 2003, pp.441-467. ⟨hal-01077681⟩

• Article dans une revue

A new empirical nonlinear model for sub-250 nm channel MOSFET

Alexandre Siligaris, Gilles Dambrine, Dominique Schreurs, Francois Danneville

An empirical nonlinear model for sub-250 nm channel length MOSFET is presented which is useful for large signal RF circuit simulation. Our model is made of both analytical drain current and gate charge formulations. The drain current expression is continuous and infinitely derivable, and charge...

IEEE Microwave and Wireless Components Letters, 2003, 13 (10), pp.449-451. ⟨10.1109/LMWC.2003.815687⟩. ⟨hal-00145981⟩

• Communication dans un congrès

Optimisation of buffer layers for InP-metamorphic heterojunction bipolar transistor on GaAs

E. Lefebvre, M. Zaknoune, Y. Cordier, F. Mollot

2003, pp.409-412. ⟨hal-00162725⟩

• Communication dans un congrès

Assessment of deteriorated concrete cover

F. Buyle-Bodin, Bogdan Piwakowski, A. Fnine, M. Goueygou, S. Ould-Naffa

Proceedings of the 2003 Workshop on Nondestructive Testing of Materials, Structures and Textures, NTM'03, 2003, Warsaw, Poland. ⟨hal-00250184⟩