Publicaciones

• Communication dans un congrès

The evolution of the concept of cycle : from common sense to an instrument of reasoning and mathematical calculation

Raffaele Pisano

IPE Symposium Common Sense in Philosophy and in Sciences, 8–9 November, IPE, Nov 2001, Napoli, Italy, Italy. ⟨hal-04519694⟩

• Article dans une revue

Spin-wave transport in serial loop structures

Abdellah Mir, Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski, Jerome O. Vasseur

The magnonic band gaps and the selective transmission in the serial loop structure (SLS), made of loops pasted together with segments of finite length, are investigated theoretically in the frame of the long-wavelength Heisenberg model. These monomode structures, composed of one-dimensional...

Physical Review B, 2001, 64 (22), ⟨10.1103/PhysRevB.64.224403⟩. ⟨hal-03302018⟩

• Article dans une revue

Second-order sound field during megasonic cleaning of patterned silicon wafers: Application to ridges and trenches

Jerome O. Vasseur, P. Deymier, J. Vasseur, A. Khelif, S. Raghavan

Journal of Applied Physics, 2001, 90 (8), pp.4211-4218. ⟨10.1063/1.1398595⟩. ⟨hal-03302022⟩

• Article dans une revue

Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystals

Christophe Delerue, Guy Allan, Michel Lannoo

We show that it is possible to perform full microscopic calculations of the phonon-assisted and no-phonon radiative transitions in silicon nanocrystals. These are based on a tight-binding Hamiltonian for the electron and electron-phonon part together with a valence force-field model for phonons. We...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.193402/1-4. ⟨10.1103/PhysRevB.64.193402⟩. ⟨hal-00152538⟩

• Communication dans un congrès

Advanced Source/Drain Architecture using Very Low Schottky Barriers: Device Design and Material Engineering

Emmanuel Dubois, G. Larrieu

31st European Solid-State Device Research Conference, Sep 2001, Nuremberg, Germany. pp.203-206, ⟨10.1109/ESSDERC.2001.195236⟩. ⟨hal-04248570⟩

• Brevet

MOS transistor for high density integration circuits

Emmanuel Dubois

Australia, Patent n° : AU3748301 (A) 2001-09-03. 2001, N° de priorité : FR20000002237 20000223 - N° de demande : AU20010037483D 20010223. ⟨hal-05696415⟩

• Article dans une revue

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

An optimisation of some growth parameters for the epitaxy of AlGaN–GaN based heterostructure field effect transistors (HFET) at low pressure in a new 3x2″ MOVPE reactor is presented. Some possible processes for the growth of semi-insulating buffers have been identified and are described. TEM...

Journal of Crystal Growth, 2001, 230 (3-4), pp.573-578. ⟨10.1016/S0022-0248(01)01303-3⟩. ⟨hal-02906506⟩

• Communication dans un congrès

Antennes millimétriques à faisceau gaussien

Ronan Sauleau, Philippe Coquet, J.P. Daniel

Optique Hertzienne et Diélectriques'01, Sep 2001, Le Mans, France. 217-220 - 4 p. ⟨hal-00557793⟩

• Article dans une revue

Millimeter wave antennas with gaussian radiation patterns

Ronan Sauleau, Philippe Coquet, K. Shinohara, J.P. Daniel, N. Hirose, T. Matsui

IEICE Transactions on Communications, 2001, E84-B (9), 2395-2406 - 12 p. ⟨hal-00557664⟩

• Brevet

MOS transistor for high density integration circuits

Emmanuel Dubois

Unknown Region, Patent n° : WO0163677 (A1) 2001-08-30. 2001, N° de priorité : FR20000002237 20000223 - N° de demande : WO2001FR00532 20010223. ⟨hal-05696414⟩