Publicaciones

Affichage de 6241 à 6250 sur 16279


  • Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of...

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

  • Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩

  • Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

  • Article dans une revue

Polarimetric distance-dependent models for large hall scenarios

Shiqi Cheng, Davy Gaillot, Emmeric Tanghe, Pierre Laly, Thierry Demol, Wout Joseph, Luc Martens, M. Lienard

IEEE Transactions on Antennas and Propagation, 2016, 64, pp.1907-1917. ⟨10.1109/TAP.2016.2535100⟩. ⟨hal-03346250⟩

  • Communication dans un congrès

InAs/Al<sub>0.4</sub>Ga<sub>0.6</sub>Sb side gated vertical TFET on GaAs substrate

Vinay Chinni, Mohammed Zaknoune, X. Wallart, L. Desplanque