Publicaciones

• Article dans une revue

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

Katir Ziouche, G. Savelli, Zahia Bougrioua, D. Hauser, P. Lejeune, P.M. Michon, Tuami Lasri, Didier Leclercq

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a...

Journal of Applied Physics, 2014, 116 (4), 043701, 7 p. ⟨10.1063/1.4891020⟩. ⟨hal-01055042⟩

• Communication dans un congrès

Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩

• Article dans une revue

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, A. Telia, Nour Eddine Bourzgui, Gilles Patriarche, A. Ougazzaden, A. Ben Moussa

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at VGS = -40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D...

Applied Physics Letters, 2014, 104, 233506, 5 p. ⟨10.1063/1.4882415⟩. ⟨hal-01009966⟩

• Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white...

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

• Communication dans un congrès

Epitaxial growth of MgO tunnel barrier on epitaxial graphene

Florian Godel, Emmanuelle Pichonat, Dominique Vignaud, Hicham Majjad, Dominik Metten, Yves Henry, Stéphane Berciaud, Jean-François Dayen, David Halley

7th CNRS-EWHA Winter School 2014, 2014, Strasbourg, France. ⟨hal-01055000⟩

• Article dans une revue

Narrow linewidth tunable terahertz radiation by photomixing without servo-locking

Antoine Rolland, Guillaume Ducournau, Gwennaël Danion, Goulc'Hen Loas, Marc Brunel, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tashin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, François Bondu, Marc Vallet, Pascal Szriftgiser, Denis Bacquet, Mehdi Alouini

A beatnote, tunable from dc to 1 THz, provided by a dual-frequency laser is used to feed an unitravelling carrier photodiode in order to produce a highly coherent THz signal radiated by a transverse-electromagnetic-horn antenna. The THz signal is detected and analyzed by a subharmonic mixer coupled...

IEEE Transactions on Terahertz Science and Technology, 2014, 4 (2), pp.260-266. ⟨10.1109/TTHZ.2013.2296144⟩. ⟨hal-00941862⟩

• Communication dans un congrès

Image and many-body effects in ultra-thin gate insulator MOSFET with In0.53Ga0.47As channel material and their influence on gate leakage current

Gabriel Mugny, D. Rideau, F. Triozon, Yann-Michel Niquet, F.G. Pereira, A. Soussou, I. Duchemin, D. Garetto, C. Tavernier, H. Jaouen, Christophe Delerue

We study the influence of many-body and image force corrections on charge distribution, threshold voltage and tunnel current in fully-depleted silicon-on-insulator (FDSOI) ultra-thin gate insulator MOSFETs. We show that image correction slightly increases threshold voltage in Si MOSFETs and that...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 5 p. ⟨hal-01020291⟩

• Communication dans un congrès

Characterization of multi-layered nanopore structure

Xiaokun Ding, Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensly, Yujun Song, Alexey Klimov

Hybridization of nanostructures opens new avenues for the synthesis of nano-architectures with multi-function and novel physicochemical properties. In this paper, we developed nanosphere template assisted physical vapor deposition to fabricate ordered multi-layered nanostructures utilizing Ag/...

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020258⟩

• Article dans une revue

Simulation and measurement of the steady-state temperature in multi-core cables

Christophe Holyk, H.D. Liess, Sébastien Grondel, H. Kanbach, F. Loos

This paper reviews, adapts and compares two analytical models for computing the steady-state temperature in multi-core cables. Both models are based on the transformation of the complex geometry of a real cable into a new single-core cable having equivalent thermal properties and simplified...

Electric Power Systems Research, 2014, 116, pp.54-66. ⟨10.1016/j.epsr.2014.05.001⟩. ⟨hal-01005126⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 3/5]

Raffaele Pisano

2014. ⟨hal-04511043⟩