Publicaciones

Affichage de 7641 à 7650 sur 16285


  • Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

  • Communication dans un congrès

RF power potential of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, Christophe Gaquière, D. Gloria

This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of...

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩. ⟨hal-00922406⟩

  • Ouvrages

Physics, Astronomy and Engineering. Critical Problems in the History of Science and Society. Proceedings of 32nd Congress for The SISFA–Italian Society of Historians of Physics and Astronomy

Raffaele Pisano, Danilo Capecchi, Anna Lukešová

The Scientia Socialis UAB & Scientific Methodical Centre Scientia Educologica Press, 2013, 978-609-95513-0-2. ⟨hal-04517712⟩

  • Article dans une revue

Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements

Gilles Amadou Koné, Brice Grandchamp, Cyril Hainaut, François Marc, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin, Cristell Maneux

IEEE Transactions on Electron Devices, 2013, 60 (3), pp.1068-1074. ⟨10.1109/TED.2013.2241067⟩. ⟨hal-00909053⟩

  • Communication dans un congrès

A high resolution nonvolatile analog memory ionic devices

L. Gao, F. Alibart, D.B. Strukov

4th Annual Non-Volatile Memories Workshop, NVMW 2013, 2013, San Diego, CA, United States. paper 57, 1-2. ⟨hal-00827380⟩

  • Communication dans un congrès

Optimization of AlGaN/GaN high electron mobility heterostructues on silicon for low cost power devices operating at 40 GHz

Stéphanie Rennesson, M. Chmielowska, S. Chenot, Yvon Cordier, François Lecourt, N. Defrance, Marie Lesecq, Virginie Hoel, Etienne Okada, Jean-Claude de Jaeger

10th International Conference on Nitride Semiconductors, ICNS-10, 2013, Washington, DC, United States. ⟨hal-00987956⟩

  • Communication dans un congrès

Silicon nanotweezers with a microfluidic cavity for the real time characterization of DNA damage under therapeutic radiation beams

G. Perret, P.T. Chiang, T. Lacornerie, M. Kumemura, N. Lafitte, Hervé Guillou, L. Jalabert, E. Lartigau, T. Fujii, F. Cleri, H. Fujita, D. Collard

35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2013, 2013, Osaka, Japan. paper SuA07.2, 6820-6820. ⟨hal-00909944⟩

  • Article dans une revue

Theoretical approach to the feasibility of power-line communication in aircrafts

Virginie Degardin, I. Junqua, M. Lienard, Pierre Degauque, S. Bertuol

IEEE Transactions on Vehicular Technology, 2013, 62, pp.1362-1366. ⟨10.1109/TVT.2012.2228245⟩. ⟨hal-00812342⟩