Publicaciones

• Article dans une revue

Intra-band gap in Lamb modes propagating in a periodic solid structure

J. Pierre, M. Renier, Bernard Bonello, Anne-Christine Hladky

Journal of Physics D: Applied Physics, 2012, 45, pp.185305-1-5. ⟨10.1088/0022-3727/45/18/185305⟩. ⟨hal-00786888⟩

• Article dans une revue

Combinatorial approaches to understanding polytypism in III-V nanowires

J. Johansson, J. Bolinsson, M. Ek, P. Caroff, K.A. Dick

ACS Nano, 2012, 6, pp.6142-6149. ⟨10.1021/nn301477x⟩. ⟨hal-00786988⟩

• Article dans une revue

A memristive nanoparticle/organic hybrid synapstor for neuroinspired computing

F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume

A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate...

Advanced Functional Materials, 2012, 22, pp.609-616. ⟨10.1002/adfm.201101935⟩. ⟨hal-00787366⟩

• Article dans une revue

In-line dynamic acoustic behavior of a viscoelastic complex media : dough application

Georges Nassar, Bertrand Nongaillard, J. Cheio

Open Acoustics Journal, 2012, 5, pp.39-45. ⟨10.2174/1874837601205010039⟩. ⟨hal-00788343⟩

• Article dans une revue

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

Semiconductors, 2012, 46, pp.382-385. ⟨10.1134/S1063782612030104⟩. ⟨hal-00788194⟩

• Article dans une revue

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Journal of Vacuum Science and Technology, 2012, 30, pp.022205-1-5. ⟨10.1116/1.3688486⟩. ⟨hal-00788195⟩

• Article dans une revue

[Review] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

Solid-State Electronics, 2012, 72, pp.15-21. ⟨10.1016/j.sse.2011.12.002⟩. ⟨hal-00788193⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-...

• Article dans une revue

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• Communication dans un congrès

Phosphorous doped (110) homoepitaxial diamond films : influence of the substrate miscut angle on growth and electrical transport

Y. Balasubramaniam, P. Robaeys, S.D. Janssens, J. d'Haen, A. Soltani, M. Nesladek

International Conference on Diamond and Carbon Materials, ICDCM 2012, 2012, Granada, Spain. ⟨hal-00798199⟩