Publicaciones

• Article dans une revue

Digital image correlation of metal nanofilms on SU-8 for flexible electronics and MEMS

Thierry Roland, S. Arscott, Laurent Sabatier, Lionel Buchaillot, Eric Charkaluk

This paper presents strain measurements using digital image correlation of common microelectronic metal nanofilms deposited onto a polymer substrate (SU-8), which has applications in flexible electronics and nano/microsystems reliability analysis. The novel experimental method is based on digital...

Journal of Micromechanics and Microengineering, 2011, 21 (12), pp.125005. ⟨10.1088/0960-1317/21/12/125005⟩. ⟨hal-00740993⟩

• Article dans une revue

Atomic scale investigation of silicon nanowires and nanoclusters

Manuel Roussel, W.H. Chen, Etienne Talbot, Rodrigue Lardé, E. Cadel, F. Gourbilleau, B. Grandidier, D. Stievenard, Philippe Pareige

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and...

Nanoscale Research Letters, 2011, 6, pp.271-1-6. ⟨10.1186/1556-276X-6-271⟩. ⟨hal-00597078⟩

• Communication dans un congrès

Atomic analyzis and photocurrent studies of isolated sub-100 nm diameter silicon nanowires

D. Stievenard, T. Xu, B. Grandidier, Yannick Lambert, C. Kreminsky, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, W. M. Chen, R. Larde, E. Cadel, P. Pareige

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579044⟩

• Communication dans un congrès

Phonon transport and thermoelectricity in twinned InAs nanowires

A. Weathers, A. Moore, J. Kim, D. Salta, K.A. Dick, L. Samuelson, H. Linke, P. Caroff, L. Shi

Materials Research Society Fall Meeting, MRS Fall 2011, Symposium W : Phonons in nanomaterials - Theory, experiments, and applications, 2011, Boston, MA, United States. ⟨hal-00807154⟩

• Communication dans un congrès

Study in the THz domain of metamaterials exhibiting a negative refractive index

F. Garet, J.L. Coutaz, S. Wang, Eric Lheurette, D. Lippens

6èmes Journées Terahertz, 2011, La Grande-Motte, France. ⟨hal-00807135⟩

• Communication dans un congrès

Improved Green's functions algorithms for the modeling of semiconductor nanostructures and devices

Y.M. Niquet, C. Delerue

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium YY : Computational semiconductor materials science, 2011, San Francisco, CA, United States. ⟨hal-00807250⟩

• Communication dans un congrès

High-resolution characterization of the charge transport in nano-organized bulk heterojunction photovoltaic layers

D. Moerman, O. Douheret, K. Lmimouni, D. Vuillaume, R. Lazzaroni

7th Plastic Electronics Conference, PE 2011, 2011, Dresden, Germany. ⟨hal-00807198⟩

• Communication dans un congrès

Explosive supercritical dynamics of ultrasound waves

O. Yevstafyev, Vladimir Preobrazhensky, Olivier Bou Matar, Philippe Pernod

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807168⟩

• Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

• Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200...

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩