Publicaciones

• Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩

• Communication dans un congrès

Numerical and experimental negative refraction of longitudinal waves in an elastic phononic

Charles Croënne, Anne-Christine Hladky, Jerome O. Vasseur, Bertrand Dubus, B. Morvan, D. Manga, A. Tinel

10th Anglo-French Physical Acoustics Conference, AFPAC'11, 2011, Fréjus, France. ⟨hal-00574513⟩

• Autre publication scientifique

Etude et réalisation de sources stables microondes à base de résonateur BAW pour micro-horloge atomique au césium

Mingdong Li

2011. ⟨hal-00579040⟩

• Communication dans un congrès

Interference modeling and relay selection issue for amplify-and-forward IR-UWB sensor networks

Jie Chen, Laurent Clavier, X. Yong, A. Burr, N. Rolland, P.A. Rolland

4th IFIP International Conference on New Technologies, Mobility and Security, NTMS 2011, 2011, France. pp.1-5, ⟨10.1109/NTMS.2011.5721051⟩. ⟨hal-00579047⟩

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of...

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at...

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Article dans une revue

Monte Carlo studies of the band-bending in GaAs/Al0.45Ga0.55As quantum-cascade laser

J. Konupek, P. Borowik, Jean-Luc Thobel, L. Adamowic

Photonics Letters of Poland, 2011, 3, pp.49-51. ⟨10.4302/plp.2011.2.02⟩. ⟨hal-00639912⟩

• Communication dans un congrès

Guide d'onde à fentes pour la détection des chutes sur les voies ferroviaires

A. Mroue, M. Heddebaut, Fouzia Boukour, Atika Rivenq

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 169, 2E19, 1-4. ⟨hal-00603130⟩

• Communication dans un congrès

Impact of gate length on the device performance of passivated InAlN/GaN HFET

N. Ketteniss, F. Lecourt, H. Behmenburg, A. Noculak, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, A. Vescan

35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, 2011, Italy. pp.1-2. ⟨hal-00603114⟩

• Article dans une revue

Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

IEEE Transactions on Electron Devices, 2011, 58, pp.1594-1596. ⟨10.1109/TED.2011.2119486⟩. ⟨hal-00603002⟩