Publicaciones
Affichage de 13391 à 13400 sur 16551
Fabrication and electrical properties of lead zirconate titanate thick films on Si substrate by using lanthanum nickelate buffer layer
Gang Wang, Denis Remiens, El Hadj Dogheche, R. Herdier, X.L. Dong
Journal of the American Ceramic Society, 2006, 89, pp.3417-3420. ⟨hal-00138715⟩
Fabrication and characterization of high index contrast optical nanowires in III-V semiconductor/benzocyclobutene
Michel Carette, D. Lauvernier, Malek Zegaoui, Jean Chazelas, Jean-Pierre Vilcot, D. Bernard, Didier Decoster
European Conference on Optical Communication (ECOC), Jul 2006, Cannes, France. pp.217-218, ⟨10.1109/ECOC.2006.4801241⟩. ⟨hal-00138751⟩
Mechanical properties determined by nano indentation tests of Pb(Zr,Ti)O3 and Pb(Mg1/3 Nb2/3)1-x TixO3) sputtered thin films
P. Delobelle, E. Fribourg-Blanc, Denis Remiens
Thin Solid Films, 2006, 515, pp.1385-1393. ⟨hal-00138710⟩
Design of low frequency acoustic sensor for wheat dough study in kneading and fermentation phases
Georges Nassar, A. Skaf, Fabrice Lefebvre, Bertrand Nongaillard, R. Dib
2006, pp.1153-1163. ⟨hal-00138738⟩
Effect of a Se monolayer on interface properties between Al2O3 and n-type Si(100)
G. Larrieu, M. Tao, N. Moumen, E. Moldonado, W.P. Kirk, G. Song, W. Bai, D.L. Kwong
Transactions of the Electrochemical Society, 2006, 1, pp.371. ⟨hal-00138658⟩
A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
R. Rengel, M.J. Martin, T. Gonzalez, J. Mateos, D. Pardo, Gilles Dambrine, J.P. Raskin, Francois Danneville
IEEE Transactions on Electron Devices, 2006, 53, pp.523-532. ⟨hal-00126521⟩
Integration of ultra wide band high pass filter using high performance inductors in advanced high resistivity SOI CMOS technology
F. Gianesello, D. Gloria, C. Raynaud, C. Tinella, P. Vincent, F. Saguin, S. Boret, C. Clement, B. van Haaren, J.M. Fournier, Gilles Dambrine, P. Benech
2006, pp.248-251. ⟨hal-00126802⟩
High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m
Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin
Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-01552875⟩
Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications
Christophe Pavageau
Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩
About the role played by the principles in the physics and mathematics by J.H. Poincaré
Raffaele Pisano
AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩