Publicaciones

• Communication dans un congrès

Raman characterization of Mg+ ion-implanted GaN

B. Boudart, Yannick Guhel, J. C. Pesant, Paul Dhamelincourt, M.A. Poisson

7th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, 2003, Lille, France. ⟨hal-01649531⟩

• Communication dans un congrès

Premiers résultats de puissance à 4 GHz obtenus sur HEMTs AlGaN/GaN en technologie planar

N. Vellas, Y. Guhel, Christophe Gaquière, B. Boudart, J.C. Pesant, Z. Bougrioua, Marie Germain, Jean-Claude de Jaeger

2003, pp.4A2-1. ⟨hal-00146692⟩

• Communication dans un congrès

Self-assembled molecular rectifying diodes

S. Lenfant, D. Vuillaume, Christophe Krzeminski, C. Delerue

Materials Research Society Spring Meeting, 2003, San Francisco, CA, United States. ⟨hal-00146173⟩

• Communication dans un congrès

Assessment of deteriorated concrete cover

F. Buyle-Bodin, Bogdan Piwakowski, A. Fnine, M. Goueygou, S. Ould-Naffa

Proceedings of the 2003 Workshop on Nondestructive Testing of Materials, Structures and Textures, NTM'03, 2003, Warsaw, Poland. ⟨hal-00250184⟩

• Communication dans un congrès

Polynomial method applied to acoustic waves in inhomogeneous cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2003, pp.1400-1403. ⟨hal-00145983⟩

• Communication dans un congrès

Impact of down scaling on high frequency noise performance of bulk and SOI MOSFETs

Gilles Dambrine, C. Raynaud, M. Vanmackelberg, Francois Danneville, G. Pailloncy, Sylvie Lepilliet, J.P. Raskin

SPIE Fluctuations and Noise Symposium, Noise in Devices and Circuits, 2003, Sante Fe, NM, United States. ⟨hal-00146001⟩

• Communication dans un congrès

An electromechanical ring lead zirconate titanate (PZT) actuator used as a spring

J.C. Debus, M. Lippert, Anne-Christine Hladky, M. Brussieux

2003 US Navy Workshop on Acoustic Transduction Materials and Devices, 2003, State College, PA, United States. ⟨hal-00145965⟩

• Article dans une revue

What are the limiting parameters of deep-submicron MOSFETs for high frequency applications ?

Gilles Dambrine, C. Raynaud, D. Lederer, M. Dehan, O. Rozeaux, M. Vanmackelberg, Francois Danneville, Sylvie Lepilliet, J.P. Raskin

IEEE Electron Device Letters, 2003, 24, pp.189-191. ⟨hal-00145984⟩

• Article dans une revue

Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects

E. Lampin, Fuccio Cristiano, Y. Lamrani, Alain Claverie, B. Colombeau, N.E.B. Cowern

The modeling of the atom-by-atom growth of extended defects is coupled to the diffusion equations of boron by transferring the free interstitial supersaturation calculated with a defect model into a process simulator. Two methods to achieve this coupling (equilibrium method and fully coupled method...

Journal of Applied Physics, 2003, 94 (12), pp.7520-7525. ⟨10.1063/1.1627461⟩. ⟨hal-00146393⟩

• Article dans une revue

Path delay model based on stable distribution for the 60GHz indoor channel

N. Azzaoui, Laurent Clavier, R. Sabre

IEEE GLOBECOM, 2003, pp.441-467. ⟨hal-01077681⟩