Publicaciones

Affichage de 6091 à 6100 sur 16549


  • Article dans une revue

Sputtered titanium carbide thick film for high areal energy on chip carbon-based micro-supercapacitors

Manon Létiche, Kevin Brousse, Arnaud Demortiere, Peihua Huang, Barbara Daffos, Sébastien Pinaud, Marc Respaud, Bruno Chaudret, Pascal Roussel, Lionel Buchaillot, Pierre-Louis Taberna, Patrice Simon, Christophe Lethien

The areal energy density of on-chip micro-supercapacitors should be improved in order to obtain autonomous smart miniaturized sensors. To reach this goal, high surface capacitance electrode (>100 mF cm−2) has to be produced while keeping low the footprint area. For carbide-derived carbon (CDC)...

Advanced Functional Materials, 2017, 27 (20), ⟨10.1002/adfm.201606813⟩. ⟨hal-01582136⟩

  • Article dans une revue

Selective isolation and eradication of E. coli associated with urinary tract infections using anti-fimbrial modified magnetic reduced graphene oxide nanoheaters

Fatima Halouane, Roxana Jijie, Dalila Meziane, Chengnan Li, Santosh K Singh, Julie Bouckaert, Jean Juraszek, Sreekumar Kurungot, Alexandre Barras, Musen Li, Rabah Boukherroub, Sabine Szunerits

The fast and efficient elimination of pathogenic bacteria from water, food or biological samples such as blood remains a challenging task. Magnetic isolation of bacteria from complex media holds particular promise for water disinfection and other biotechnological applications employing bacteria....

Journal of materials chemistry‎ B, 2017, 5 (40), pp.8133-8142. ⟨10.1039/C7TB01890H⟩. ⟨hal-01716569⟩

  • Communication dans un congrès

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Guillaume Croizier, Paolo Martins, M. Le Bailiff, Raphaël Aubry, S. Bansropun, M. Fryziel, Nathalie Rolland, Afshin Ziaei

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction....

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Jun 2017, Kaohsiung, Taiwan. pp.1237-1240, ⟨10.1109/TRANSDUCERS.2017.7994279⟩. ⟨hal-03270114⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 6/2]

Raffaele Pisano

2017. ⟨hal-04511014⟩

  • Article dans une revue

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

F. Berthet, S. Petitdidier, Y. Guhel, J.L. Trolet, P. Mary, A. Vivier, Christophe Gaquière, B. Boudart

Solid-State Electronics, 2017, 127, pp.13 - 19. ⟨10.1016/j.sse.2016.10.039⟩. ⟨hal-01646143⟩

  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs...

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩