Publicaciones

• Article dans une revue

High frequency ultrasound measurements on a translucent thin bioglass, based on Si, Ca, Na : study of the distribution of elastic modulus

A. Bachar, Georges Nassar, Cyrille Albert-Mercier, F. Bouchart, C. Follet, R. Amrousse, M. Kazan

Optical Materials, 2013, 36, pp.75-79. ⟨10.1016/j.optmat.2013.05.009⟩. ⟨hal-00877713⟩

• Article dans une revue

Tunable interdigitated capacitances on Ba0.3Sr0.7TiO3 thin-film

A. Ghalem, Freddy Ponchel, Denis Remiens, Jean-François Legier, T. Lasri

Integrated Ferroelectrics, 2013, 142, pp.44-51. ⟨10.1080/10584587.2013.780151⟩. ⟨hal-00877714⟩

• Autre publication scientifique

Modélisation de la propagation et de la réception des ondes élastiques émises par un défaut sous contrainte. Application à la simulation des contrôles non-destructifs par émission acoustique

Warida Ben Khalifa

2013. ⟨hal-00799262⟩

• Article dans une revue

Modeling of high contrast partially electroded resonators by means of a polynomial approach

P.M. Rabotovao, F.E. Ratolojanahary, Jean-Etienne Lefebvre, A. Raherison, L. Elmaimouni, Tadeusz Gryba, J.G. Yu

Journal of Applied Physics, 2013, 114 (12), pp.124502. ⟨10.1063/1.4821768⟩. ⟨hal-00877665⟩

• Communication dans un congrès

Les effets du couplage inter-éléments dans les réseaux de transducteurs acoustiques

Abdelmajid Bybi, Jamal Assaad, Sébastien Grondel, Marc Duquennoy, Anne-Christine Hladky, Christian Granger

6ème Colloque Interdisciplinaire en Instrumentation, C2I 2013, 2013, Lyon, France. pp.47-54. ⟨hal-00955219⟩

• Article dans une revue

Robust surface-potential-based compact model for GaN HEMT IC design

S. Khandelwal, C. Yadav, S. Agnihotri, Y.S. Chauhan, A. Curutchet, T. Zimmer, J.C. Dejaeger, N. Defrance, T.A. Fjeldly

IEEE Transactions on Electron Devices, 2013, 60, pp.3216-3222. ⟨10.1109/TED.2013.2265320⟩. ⟨hal-00872023⟩

• Communication dans un congrès

A 1 GHz SAW oscillator on epitaxial GaN/Si substrate : toward co-integrated frequency sources

M. Faucher, G. Martin, J.M. Friedt, S. Ballandras

GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN for the fabrication of surface acoustic wave oscillators. The first...

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. paper IFCS-EFTF1-B2-5, 21-24, ⟨10.1109/EFTF-IFC.2013.6702231⟩. ⟨hal-00944027⟩

• Article dans une revue

Frequency and angular bandwidth of acousto-optic deflectors with ultrasonic walk-off

Jean-Claude Kastelik, Samuel Dupont, Konstantin B. Yushkov, Joseph Gazalet

Ultrasonics, 2013, 53, pp.219-224. ⟨10.1016/j.ultras.2012.06.003⟩. ⟨hal-00796423⟩

• Communication dans un congrès

Sheet resistance of multi-layer stacking of silicene

Pierre Capiod, Maxime Berthe, Andrea Resta, Paola de Padova, Patrick Vogt, Guy Le Lay, B. Grandidier

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium I - The route to post-Si CMOS devices : from high mobility channels to graphene-like 2D nanosheets, 2013, Strasbourg, France. ⟨hal-00819685⟩

• Communication dans un congrès

A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks

H. Sellier, M. Pala, S. Baltazar, P. Liu, B. Hackens, F. Martins, X. Wallart, L. Desplanque, V. Bayot, S. Huant

16th International Conference on Modulated Semiconductor Structures, MSS-16, 2013, Wroclaw, Poland. ⟨hal-00878505⟩