Publicaciones

Affichage de 8491 à 8500 sur 16549


  • Communication dans un congrès

Ultrasound tests in a stirred vessel to evaluate the ability of dairy powders to reconstitute

Bruno Richard, Malika Toubal, Jean-Francois Le Page, Georges Nassar, Edouard Radziszewski, Bertrand Nongaillard, Pascal Debreyne, Pierre Schuck, Romain Jeantet, Guillaume Delaplace

This study demonstrated the feasibility of applying an ultrasound test to evaluate the ability of a powder to interact with a solvent and thus to predict the reconstitution behavior of powders. The ultrasound test consisted of using a probe immersed in a stirring tank to monitor the ultrasound...

5. International Symposium on Spray Dried Dairy Products, Jun 2012, Saint Malo, France. ⟨hal-01209386⟩

  • Communication dans un congrès

Evolution de la résonance plasmonique de plots d'or déposés sur un substrat diélectrique

O. Saison-Francioso, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Sabine Szunerits, Rabah Boukherroub

13èmes Journées de la Matière Condensée, JMC13, 2012, Montpellier, France. ⟨hal-00798128⟩

  • Communication dans un congrès

Dual phononic and photonic strip waveguides

Yan Pennec, Bahram Djafari-Rouhani, C.S. Li, Y. El Hassouani, J.M. Escalante, A. Martinez, S. Benchabane, V. Laude, N. Papanikolaou

SPIE Photonics Europe, Photonic Crystal Materials and Devices, 2012, Brussels, Belgium. ⟨hal-00798120⟩

  • Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

  • Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

  • Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

  • Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩