Publicaciones

• Communication dans un congrès

Effects of substrate preparation on properties of YBaCuO thin films

A. Dégardin, X. Castel, M. Achani, Maryline Guilloux-Viry, E. Caristan, Yannick Roelens, J.C. Carru, A. Perrin, A. Kreisler

2000, pp.1993-1994. ⟨hal-00157906⟩

• Communication dans un congrès

An ultra high switching frequency step-down DC-DC converter based on gallium arsenide devices

Mamadou Gaye, Sami Ajram, Paul Maynadier, Georges Salmer

A 50MHz to 100MHz dc-dc power converter using Gallium Arsenide power switches is studied. GaAs Schottky rectifiers with high breakdown voltage and very small Ron x Con switching quality factor have been fabricated. A 10V to 5V (or 8V) prototype with an output power of 2.6Watts and a power...

_, 2000, _, France. 4 pp. ⟨hal-00157875⟩

• Article dans une revue

The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter

S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, Virginie Hoel, Sylvie Lepilliet, D. Theron, A. Cappy

Solid-State Electronics, 2000, 44, pp.1021-1027. ⟨hal-00157879⟩

• Autre publication scientifique

Conception et réalisation d'une source stable programmable en intégration monolithique, en bande K

P. Lefevre

2000. ⟨hal-00157899⟩

• Article dans une revue

Acoustic wave scattering from a composed shell reinforced by a single rib : characteristics of peripheral waves

Bertrand Dubus, N. Veksler, A. Lavie

Ultrasonics, 2000, 38, pp.838-841. ⟨hal-00157817⟩

• Communication dans un congrès

Visualisation des ondes Ao, So, A1, S1 et A sur une plaque métallique immergée

L. Derbesse, Philippe Pernod, V. Latard, A. Merlen

2000, pp.92-94. ⟨hal-00158457⟩

• Article dans une revue

Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps

Y. Cordier, D. Ferre, J.M. Chauveau, J. Dipersio

Applied Surface Science, 2000, 166, pp.442-445. ⟨hal-00158436⟩

• Communication dans un congrès

Electron transport in monolayers of sigma/pi heterostructures

D. Vuillaume

Molecular Electronics 2000, 2000, Kailua-Kona, Hawai, United States. ⟨hal-00158473⟩

• Autre publication scientifique

Microélectronique et microtechnologies des composants III-V. Applications aux longueurs d'onde millimétrique et submillimétrique

P. Mounaix

2000. ⟨hal-00158226⟩

• Communication dans un congrès

Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : comparison with the GaInAs/GaAs system

X. Wallart, D. Deresmes, F. Mollot

2000, pp.231-234. ⟨hal-00158442⟩