Publicaciones

Affichage de 5991 à 6000 sur 16553


  • Article dans une revue

Impact of Gate Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs

Mehdi Rzin, Jean-Marc Routoure, Bruno Guillet, Laurence Méchin, Magali Morales, Cédric Lacam, Piero Gamarra, Pierre Ruterana, F Medjdoub

In this paper we investigated the gate–drain access region spacing (L GD) effect on electrical and noise performance of InAlGaN/GaN metal– insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN cap layer as gate insulator. Different L GD of InAlGaN/GaN MIS-HEMTs...

IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2820-2825. ⟨10.1109/TED.2017.2703809⟩. ⟨hal-01560627⟩

  • Article dans une revue

Copper oxide supported on three-dimensional ammonia-doped porous reduced graphene oxide prepared through electrophoretic deposition for non-enzymatic glucose sensing

Houcem Maaoui, Santosh Singh, Florina Teodorescu, Yannick Coffinier, Alexandre Barras, Alexandr Barras, Radhouane Chtourou, Sreekumar Kurungot, Sabine Szunerits, Rabah Boukherroub

Electrochimica Acta, 2017, 224, pp.346-354. ⟨10.1016/j.electacta.2016.12.078⟩. ⟨hal-04520463⟩

  • Article dans une revue

Acknowledgement to Reviewers of Nanomaterials in 2016

S. Arscott

Nanomaterials, 2017, 7 (1), pp.14. ⟨10.3390/nano7010014⟩. ⟨hal-02345453⟩

  • Communication dans un congrès

Influence d’un stress à canal ouvert sur les signaux d’électroluminescence émis par des transistors AlInN/GaN

Fanny Berthet, Guillaume Brocero, Sebastien Petitdidier, Yannick Guhel, Philippe Eudeline, Jean Lionel Trolet, Patrick Mary, A. Vivier, Christophe Gaquière, B. Boudart

20es Journées Nationales Microondes, 2017, Saint Malo, France. ⟨hal-01652207⟩