Publicaciones

• Article dans une revue

Generation and detection of manipulated multimodal audiovisual content: Advances, trends and open challenges

Helena Liz-López, Mamadou Keita, Abdelmalik Taleb-Ahmed, Abdenour Hadid, Javier Huertas-Tato, David Camacho

Generative deep learning techniques have invaded the public discourse recently. Despite the advantages, the applications to disinformation are concerning as the counter-measures advance slowly. As the manipulation of multimedia content becomes easier, faster, and more credible, developing effective...

Information Fusion, 2024, 103, pp.102103. ⟨10.1016/j.inffus.2023.102103⟩. ⟨hal-04281649⟩

• Article dans une revue

Linking Cause and Effect: Nanoscale Vibrational Spectroscopy of Space Weathering from Asteroid Ryugu

Sylvain Laforet, Corentin Le Guillou, Francisco de la Peña, Michael Walls, Luiz H.G. Tizei, Maya Marinova, Pierre Beck, van T. H. Phan, Damien Jacob, Bahae-Eddine Mouloud, Daniel Hallatt, Mario Pelaez-Fernandez, Jean-Christophe Viennet, David Troadec, Takaaki Noguchi, Toru Matsumoto, Akira Miyake, Hisayoshi Yurimoto, Hugues Leroux

Abstract Airless bodies are subjected to space-weathering effects that modify the first few microns of their surface. Therefore, understanding their impact on the optical properties of asteroids is key to the interpretation of their color variability and infrared reflectance observations. The..., Les corps dépourvus d'atmosphère tels que les astéroïdes sont soumis à des effets d’altération spatiale qui modifient les premiers microns de leur surface. Par conséquent, la compréhension de leur impact sur les propriétés optiques de ces astéroïdes est essentielle pour l’interprétation de...

The Astrophysical Journal Letters, 2024, The Astrophysical Journal Letters, 963 (2), pp.L45. ⟨10.3847/2041-8213/ad2b65⟩. ⟨hal-04505901⟩

• Article dans une revue

Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/...

Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩. ⟨hal-04378667⟩

• N°spécial de revue/special issue

Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

Matteo Meneghini, Geok Ing Ng, Farid Medjdoub, Matteo Buffolo, Shireen Warnock, Digbijoy Nath, Jun Suda, Junxia Shi, Shyh-Chiang Shen

IEEE Transactions on Electron Devices, 71 (3), pp.1340-1343, 2024, ⟨10.1109/TED.2024.3359934⟩. ⟨hal-04493325⟩

• Article dans une revue

Quantum point-contact sensors: State of the art and prospects

Gennadii Kamarchuk, Olexander Pospelov, Volodymyr Vakula, Eric Faulques

We present generalized information on the new type of universal quantum detectors operating on the basis of Yanson point contacts. The properties and capabilities of quantum point-contact detectors are totally different from those of conventional sensors based on the principle of changing electric...

Sensors and Actuators B: Chemical, 2024, 402, pp.135064. ⟨10.1016/j.snb.2023.135064⟩. ⟨hal-04548686⟩

• Article dans une revue

Engineering and optimization of the SPR device ZnO/Ag/WO3/Ni/2D-Nanomaterials highly sensitive for biomedical processing and detection

Mohamed El Barghouti, Fatima Houari, Abdellatif Akjouj, Abdellah Mir

In this paper, we present a detailed study of the effect of WO3 and Ni films in the presence of BP and BlueP-MDC nanomaterial layers on the sensitivity of a surface plasmon resonance (SPR) following the change in refractive index of the detection medium. Our nanostructure is based on the...

Optical Materials, 2024, 149, pp.115019. ⟨10.1016/j.optmat.2024.115019⟩. ⟨hal-04465252⟩

• Article dans une revue

Adjusting Ag deposition power to improve corrosion resistance of ITO/Ag/ITO film for gate driver on array

Pingping Zhang, Zhiqiang Zhang, Xiang Yu, Lei Yang, Shuo Zhao, Rabah Boukherroub

Gate Driver on Array (GOA) can fulfil narrow-frame full screen of display device, but may encounter through-hole burnout during operation due to electrochemical corrosion under high-temperature and high-humidity environments. Through-hole burnout originates from vapor that penetrates display...

Vacuum, 2024, 221, pp.112918. ⟨10.1016/j.vacuum.2023.112918⟩. ⟨hal-04374549⟩

• Article dans une revue

Spintronic terahertz emitters with integrated metallic terahertz cavities

Martin Mičica, Adrien Wright, Pierre Koleják, Geoffrey Lezier, Kamil Postava, Jacques Hawecker, Anna de Vetter, Jérôme Tignon, Juliette Mangeney, Henri Jaffrès, Romain Lebrun, Nicolas Tiercelin, Mathias Vanwolleghem, Sukhdeep Dhillon

Spintronic terahertz emitters (STEs), based on optical excitation of nanometer thick ferromagnetic/heavy metal (FM/HM) heterojunctions, have become important sources for the generation of terahertz (THz) pulses. However, the efficiency of the optical-to-THz conversion remains limited. Although...

Nanophotonics, 2024, 13 (10), pp.1899-1907. ⟨10.1515/nanoph-2023-0807⟩. ⟨hal-04509627⟩

• Article dans une revue

Tilt-related alignment issues in miniature micromechanical on-wafer electrical probes composed of multiple flexible microcantilevers

Steve Arscott

Abstract Some new issues concerning the contacting and positioning of small electrical microelectromechanical systems (MEMS) probes based on multiple, flexible microcantilevers are presented here. A tilt error, associated with the lateral probe roll, means that contact touchdown occurs sequentially...

Engineering Research Express, 2024, 6 (1), ⟨10.1088/2631-8695/ad2ccc⟩. ⟨hal-04485030⟩

• Article dans une revue

A G-band Packaged Amplified Noise Source using SiGe BiCMOS 55 nm Technology

Victor Fiorese, Joao Carlos Azevedo Goncalves, Simon Bouvot, Sylvie Lepilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière, Emmanuel Dubois

This article introduces the first BiCMOS SiGe technology based packaged noise source (NS) operating in G-band (140-220 GHz). An amplified PN junction diode has been packaged and biased in avalanche mode to generate Excess Noise Ratios (ENRav) of approximately 25 dB between 140 and 170 GHz at...

IEEE Transactions on Microwave Theory and Techniques, 2024, 72 (3), pp.1775 - 1789. ⟨10.1109/TMTT.2023.3311476⟩. ⟨hal-04192337v2⟩