Publicaciones

Affichage de 12801 à 12810 sur 16296


  • Communication dans un congrès

Plasma wave HEMTs for THz applications

A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, N. Dyakonova, W. Knap, J. Lusakowski, F. Teppe, A. El Fatimy, M. Dyakonov

Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, 2006, China. pp.136, ⟨10.1109/ICIMW.2006.368344⟩. ⟨hal-00241319⟩

  • Communication dans un congrès

Carbon nanotubes self-assembly for electronic applications

Vincent Derycke, M. F. Goffman, Jean-Sébastien Borghetti, Erik Dujardin, Arianna Filoramo, Pascale Chenevier, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Stéphane Lenfant, Dominique Vuillaume, Jean-Philippe Bourgoin

Proceedings of the 2006 International Conference on Micro and Nano Engineering, MNE06, 2006, Barcelona, Spain. ⟨hal-00241346⟩

  • Communication dans un congrès

Vibrotactile using micromachined electromagnetic actuators array

Abdelkrim Talbi, O. Ducloux, Nicolas Tiercelin, Y. Deblock, Philippe Pernod, Vladimir Preobrazhensky

Proceedings of EuroHaptics 2006 Conference, 2006, Paris, France. ⟨hal-00241072⟩

  • Communication dans un congrès

Attenuation measurements in thin films using picosecond ultrasonics

P. Emery, Arnaud Devos, A. Volatier, P. Ancey

Proceedings of the 2006 IEEE International Ultrasonics Symposium, 2006, Vancouver, Canada. ⟨hal-00240711⟩

  • Communication dans un congrès

Efficient spreading code allocation strategy for a downlink MC-CDMA system in a time varying frequency selective channel

H. El Ghazi, C. Garnier, Y. Delignon

2006, 5 pp. ⟨hal-00154925⟩

  • Article dans une revue

Terahertz detection by GaN/AlGaN transistors

Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a...

Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩

  • Autre publication scientifique

Jonctions nanométriques à base d'électrodes ou de nanofils en siliciure de titane

T. Soubiron

2006. ⟨hal-00162822⟩