Publicaciones

• Thèse

Thermal characterization of GeSbTe alloys by Raman thermometry for Phase-Change Memories, Caractérisation thermique des alliages GeSbTe par thermométrie Raman pour les mémoires à changement de phase

Akash Patil

Phase change Materials have been the basis of memory storage beginning from its application for optical data storage in 1987. Fast forward to 2010s, phase change memories developed were 1000 times faster with greater endurance than NAND; and 10 times denser than DRAM. PMs based on chalcogenides..., Les matériaux à changement de phase sont à la base du stockage des mémoires depuis leur application au stockage optique des données en 1987. Dans les années 2010, les mémoires à changement de phase développées étaient 1000 fois plus rapides et plus endurantes que les mémoires NAND, et 10 fois plus...

Micro and nanotechnologies/Microelectronics. Université de Lille, 2023. English. ⟨NNT : 2023ULILN037⟩. ⟨tel-04724070⟩

• Communication dans un congrès

Development of viscoelastic thin films to mitigate shock wave-induced laser damage in high power laser systems

Amira Guediche, Laurent Belliard, Bernard Perrin, Marc Duquennoy, Amandine Moiny, Mathieu Lafarie, Michel Boustié, Emilien Lescoute, Philippe Belleville, Hervé Piombini

Spallation effects caused by shock waves in optical components such as those used in the Laser MegaJoule facility during laser operation can lead to material fracture. One solution could be to use a viscoelastic thin film on these fused silica components to reduce the reflection of shock waves from...

SPIE Laser Damage, SPIE, Sep 2023, Livermore, CA, United States. pp.PC127260A, ⟨10.1117/12.2685395⟩. ⟨hal-04429216⟩

• Brevet

Synapse artificielle commutée

Francois Danneville, Alain Cappy, Ilias Sourikopoulos, Christophe Loyez

Région indéterminée, N° de brevet: EP3794514 (B1) 2023-11-22. 2023, N° de priorité : FR20180054010 20180514 - N° de demande : EP20190722649 20190513. ⟨hal-05655008⟩

• Brevet

Synapse artificielle commutée

Francois Danneville, Alain Cappy, Ilias Sourikopoulos, Christophe Loyez

Région indéterminée, N° de brevet: EP3794514 (C0) 2023-11-22. 2023, N° de priorité : FR20180054010 20180514 - N° de demande : EP20190722649 20190513. ⟨hal-05655009⟩

• Communication dans un congrès

[Invited] Quand la chimie du solide rencontre la micro-électronique: les micro-batteries 3D

Pascal Roussel, C. Lethien

RX&Mat2023 - 15ème colloque Rayons X et Matière, Nov 2023, Bordeaux (Gironde), France. ⟨hal-04410346⟩

• Communication dans un congrès

[Invited] The Symmetries in the History of Physics: Phenomena and Ideas in Maxwell, Noether and Einstein

Raffaele Pisano

Symmetries in Physics, 19 November 2023, HAPP, St Cross College, University of Oxford, UK, Nov 2023, Mathematical Institute, University of Oxford University, Oxford, United Kingdom. ⟨hal-04518272⟩

• Article dans une revue

Identification of <em>Cryptosporidium parvum</em> IIa and IId zoonotic subtype families and <em>Cryptosporidium bovis</em> from calves in Algeria

Lynda Sahraoui, Mohamed Mammeri, Myriam Thomas, Aurélie Chevillot, Bruno Polack, Isabelle Vallée, Jérôme Follet, Hacina Ain-Baaziz, Karim Tarik Adjou

Cryptosporidiosis is a significant disease in calves caused by the parasitic protist Cryptosporidium. The infection results in severe symptoms such as diarrhea, dehydration, delayed growth, and weight loss, often leading to mortality and economic losses. This study aimed to detect Cryptosporidium...

• Brevet

Inpedance cardiography device

Olev Martens, Anar Abdullayev, Margus Metshein, Antoine Gautier, Antoine Frappe, Andrei Krivodei, Marek Rist, Paul Annus, Benoit Larras, Deepu John, Barry Cardiff

Estonia, Patent n° : EE202200004 (A) 2023-11-15. 2023, pp.N° de demande : EE2022P000004 20220329. ⟨hal-05649980⟩

• Communication dans un congrès

Devices and circuits for HF applications based on 2D materials

Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, Emiliano Pallecchi, Henri Happy

Graphene and related 2D materials have been extensively studied in recent years. As a result, numerous components have been developed for a wide range of applications in high frequency electronics and telecommunications. These include graphene field effect transistors (GFET) which can be used to...

2023 38th Conference on Design of Circuits and Integrated Systems (DCIS), Nov 2023, Málaga, Spain. pp.1-5, ⟨10.1109/DCIS58620.2023.10335977⟩. ⟨hal-04396932⟩

• Brevet

Method for producing diode

Pascal Chevalier, Alexis Gauthier, Gregory Avenier

United States, Patent n° : US11817353 (B2) 2023-11-14. flagship_devices. 2023, Numéro de demande: US202217568500 20220104 - Numéro(s) de priorité: FR20190007149 20190628 ; US202016909378 20200623 ; US202217568500 20220104. ⟨hal-05639532⟩