Publicaciones
Affichage de 14931 à 14940 sur 16440
Characterization of surface cracks in metals by microwave techniques
D. Glay, T. Lasri
2002, pp.50-52. ⟨hal-00147878⟩
AlGaN/GaN HEMT for RF power applications
Jean-Claude de Jaeger, Z. Bougria, S. Cassette, E. Chartier, Y. Cordier, Gilles Dambrine, E. Delos, M.A. Poisson, S. Delage, B. Dessertenne, D. Ducatteau, M. Elkhou, D. Floriot, Christophe Gaquière, Et Al.
10th European Gallium Arsenide and Other Semiconductors Application Symposium, GAAS 2002, 2002, Milano, Italy. ⟨hal-00149736⟩
On the existence of subresonance generated in a one-dimensional chain of identical spheres
Anne-Christine Hladky, F. Cohen-Tenoudji, Arnaud Devos, M. de Billy
Journal of the Acoustical Society of America, 2002, 112, pp.850-855. ⟨hal-00147757⟩
Ferroelectric (116) SrBi2Nb2O9 thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) SrTiO3 electrode
Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Eric Cattan, Caroline Soyer, Denis Remiens
Applied Physics Letters, 2002, 81 (11), pp.2067-2069. ⟨10.1063/1.1504179⟩. ⟨hal-00149629⟩
Conception et réalisation d'un séparateur acousto-optique de polarisation
A. Sakkour
2002. ⟨hal-00162705⟩
From nanoelectronics to nanotechnology
Emmanuel Dubois
Belgian Journal of Electronics & Communications HF, 2002, 3, pp.9-16. ⟨hal-00250387⟩
On the physical interest of some numerical methods for wave phase conjugation in active media
A. Merlen, Vladimir Preobrazhensky, Philippe Pernod
2002, pp.208. ⟨hal-00148692⟩
High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz
N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs
2002, 4 pp. ⟨hal-00149700⟩
Analyse physique des HEMTs à base de nitrure de gallium
M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger
GDR Semiconducteurs à large bande interdite, 2002, Montpellier, France. ⟨hal-00149718⟩