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Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping

Ndembi Ignoumba-Ignoumba, Camille Sonneville, Thomas Kaltsounis, Vishwajeet Maurya, Hala El Rammouz, Mohammed El Amrani, Maroun Dagher, Florian Bartoli, Thibaud Guillemin, Adrien Bidaud, Eric Frayssinet, Farid Medjdoub, Hassan Maher, Jean Marie Bluet, Dominique Planson, Julien Buckley, Yvon Cordier, Matthew Charles, Cyril Buttay

In this work, using micro-Raman spectroscopy mapping, we propose a methodology to separate the stress effect from the n-doping effect on A1LO and E2H GaN phonon modes frequency for low n-doped (<1017 cm−3) GaN layers grown on various substrates (GaN, sapphire, and silicon). This methodology...

Applied Physics Letters, 2026, 128 (12), ⟨10.1063/5.0325369⟩. ⟨hal-05577908⟩