Publicaciones

• Article dans une revue

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

D Goguenheim, Alain Bravaix, Dominique Vuillaume, F Mondon, M Jourdain, A Meinertzhagen

In this study, we report on the electrical properties of the stress induced leakage current which appears through a 4.7 nm-thick SiO2 gate oxide of N-channel metal-oxide-semiconductor field effect transistors after localized channel hot carrier injections and Fowler–Nordheim uniform injections. We...

Journal of Non-Crystalline Solids, 1999, 245 (1-3), pp.41-47. ⟨10.1016/S0022-3093(98)00852-7⟩. ⟨hal-03674356⟩

• Article dans une revue

Large magnonic band gaps and defect modes in one-dimensional comblike structures

Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, Jerome O. Vasseur, L. Dobrzynski, Pierre A. Deymier

We report the existence of large gaps in the band structure of a comblike structure composed of a one-dimensional magnonic waveguide along which N′ dangling side branches are grafted at N equidistant sites. These gaps originate not only from the periodicity of the system but also from the resonance...

Physical Review B, 1999, 59 (13), pp.8709-8719. ⟨10.1103/PhysRevB.59.8709⟩. ⟨hal-03301325⟩

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four...

Microelectronics Reliability, 1999, Microelectronics Reliability, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03689782⟩

• Article dans une revue

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

S. Arscott, R. Miles, J. Kennedy, S. Milne

Journal of Materials Research, 1999, 14 (2), pp.494-499. ⟨10.1557/JMR.1999.0070⟩. ⟨hal-02348064⟩

• Article dans une revue

Theoretical reflexion coefficient of metal grid reflectors at a dielectric boundary

Ronan Sauleau, Daniel Thouroude, Philippe Coquet, J.P. Daniel

International Journal of Infrared and Millimeter Waves, 1999, 20 (2), 325-340 - 16 p. ⟨hal-00557636⟩

• Article dans une revue

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, Alain Bravaix, Dominique Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

In this study, we have investigated the electrical properties of the failure mode referred as quasi-breakdown or soft-breakdown in MOS capacitors on p-type substrate with an oxide thickness of 4.5 nm. Quasi-breakdown appears during high field stresses as a sudden increase between two and four...

Microelectronics Reliability, 1999, 39 (2), pp.165-169. ⟨10.1016/S0026-2714(98)00215-7⟩. ⟨hal-03674374⟩

• Communication dans un congrès

Nanometer scale Lithography on Silicon, Titanium and PMMA resist

Emmanuel Dubois, Jean-Luc Bubendorff

E-MRS Materials and Processes for Submicron Technologies, vol. 89, p. 1085-1089, Editors J.M. Martinez- Duart, R. Madar, R.A. Levy, 1999, 1999, Strasbourg, France. ⟨hal-04249216⟩

• Communication dans un congrès

Very high selective wet etching application to the uniformity improvement of linear power PHEMT

X. Hue, B. Boudart, Bertrand Bonte, Y. Crosnier

23th Workshop On Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), 1999, Chantilly, France. ⟨hal-01654299⟩

• Proceedings/Recueil des communications

Modeling and Optimisation of Optoelectronics devices

Joseph Harari, Vincent Magnin

The aim of this paper is to present modeling and optimisation methods to be applied in optoelectronics. We do not consider the case of laser. At first, we present the main modeling methods that we used to simulate the device optical and electrical behaviour. Secondly we tackle with the interesting...

29th European Solid-State Device Research Conference (ESSDERC'99), IEEE, 1999, 2-86332-245-1. ⟨hal-04449542⟩

• Communication dans un congrès

Etude du contact ohmique Ti/Al/Ni/Au sur n-GaN pour applications hyperfréquences et haute température de TECs de puissance

B. Boudart, S. Trassaert, Xavier Wallart, J.C. Pesant, L Fugère, Didier Theron, Y. Crosnier

7es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1999, Egat, France. ⟨hal-01654466⟩