Publicaciones

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of...

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Communication dans un congrès

Coherent & tunable THz source

R. Paquet, S. Blin, M. Myara, L. Le Gratiet, M. Sellahi, B. Chomet, P. Latzel, Guillaume Ducournau, Jean-Francois Lampin, G. Beaudoin, I. Sagnes, A. Garnache

Meeting GDR NanoTeramir, 2016, Paris, France. ⟨hal-01919731⟩

• Article dans une revue

DS-UWB and TH-UWB Energy Consumption Comparison

Adil Elabboubi, Fouzia Elbahhar, Marc Heddebaut, Yassin El Hillali

The energy consumption of the wireless communication systems is starting to be unaffordable. One way to improve the power consumption is the optimization of the communication techniques used by the communication networks and devices. In order to develop an energy efficient UWB multi-user...

Journal of Telecommunications and Information Technology, 2016, 2016 (1), pp.101-109. ⟨hal-01469836v2⟩

• Article dans une revue

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Jing Li, Yann-Michel Niquet, Christophe Delerue

We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the...

Physical Review Letters, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩

• Article dans une revue

Inverse saffman-taylor experiments with particles lead to capillarity driven fingering instabilities

Ilyesse Bihi, Michael Baudoin, Jason E. Butler, Christine Faille, Farzam Zoueshtiagh

Using air to displace a viscous fluid contained in a Hele-Shaw cell can create a fingering pattern at the interface between the fluids if the capillary number exceeds a critical value. This Saffman-Taylor instability is revisited for the inverse case of a viscous fluid displacing air when partially...

Physical Review Letters, 2016, 117 (3), ⟨10.1103/PhysRevLett.117.034501⟩. ⟨hal-02636447⟩

• Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

• Article dans une revue

Broadband dielectric characterization of aqueous saline solutions by an interferometer-based microwave microscope

S. Gu, Tianjun Lin, T. Lasri

The complex dielectric permittivity of aqueous saline solutions has been determined in the frequency range [2-18 GHz] with a home-made near-field microwave microscope. The instrument is built on a vector network analyzer, a matching network, and an evanescent microwave probe. The interferometer-...

Applied Physics Letters, 2016, 108 (24), pp.242903. ⟨10.1063/1.4953629⟩. ⟨hal-03538486⟩

• Article dans une revue

Polarimetric distance-dependent models for large hall scenarios

Shiqi Cheng, Davy Gaillot, Emmeric Tanghe, Pierre Laly, Thierry Demol, Wout Joseph, Luc Martens, M. Lienard

IEEE Transactions on Antennas and Propagation, 2016, 64, pp.1907-1917. ⟨10.1109/TAP.2016.2535100⟩. ⟨hal-03346250⟩

• Communication dans un congrès

InAs/Al_0.4Ga_0.6Sb side gated vertical TFET on GaAs substrate

Vinay Chinni, Mohammed Zaknoune, X. Wallart, L. Desplanque

• Article dans une revue

AlN/IDT/AlN/Sapphire SAW Heterostructure for High-Temperature Applications

Ouarda Legrani, Thierry Aubert, Omar Elmazria, Ausrine Bartasyte, Pascal Nicolay, Abdelkrim Talbi, Pascal Boulet, Jaafar Ghanbaja, Denis Mangin

Recent studies have evidenced that Pt/AlN/Sapphire SAW devices are promising for high-temperature high-frequency applications. However, they cannot be used above 700°C in air atmosphere as the Pt interdigital transducers (IDTs) agglomerate and the AlN layer oxidizes in such conditions. In this...

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2016, 63 (6), pp.898 - 906. ⟨10.1109/TUFFC.2016.2547188⟩. ⟨hal-01525494⟩