Publicaciones

• Communication dans un congrès

[Invited] Surface science of semiconductor nanowires

B. Grandidier

International Nano-Optoelectronic Workshop, iNOW 2014, 2014, St. Petersburg, Russia. ⟨hal-01044671⟩

• Communication dans un congrès

Optical and microstructural properties into nanoporous GaN films grown on sapphire by metal organic chemical vapor deposition

Bandar Alshehri, S.-M. Lee, J.-H. Kang, Karim Dogheche, S.-H. Gong, S.-W. Ryu, E. Dumont, Y.-H. Cho, El Hadj Dogheche

Gallium Nitride (GaN) thin films have been prepared on sapphire by metal organic chemical vapor deposition (MOCVD) technique and a chemical etching method using KOH is used to develop nanoporous structures [1]. We present comparative investigations of porous and nonporous GaN layers. While the...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961412⟩

• Article dans une revue

Dispersion characteristic of ultrathin terahertz planar lenses based on metasurface

Dan Hu, Gabriel Moreno, Xinke Wang, Jingwen He, Abdallah Chahadih, Zhenwei Xie, Bo Wang, Tahsin Akalin, Yan Zhang

Terahertz (THz) radiation has attached a lot of attention due to its potential applications. The smart optical components will greatly boost the application of the THz technology. Ultrathin planar lenses which can greatly reduce the thickness of the components are designed and fabricated in the THz...

Optics Communications, 2014, 322, pp.164-168. ⟨10.1016/j.optcom.2014.02.017⟩. ⟨hal-00961382⟩

• Communication dans un congrès

Improved wet chemical transfer process to obtain clean high quality graphene

Geetanjali Deokar, Jean-Louis Codron, Emmanuelle Pichonat, Xavier Wallart, Henri Happy, Dominique Vignaud

Graphene growth on metal substrates (Cu, Ni etc.) by catalyzed chemical vapor deposition (CVD) is a highly suitable method for large scale production [1,2]. However, graphene based electronic devices full realization requires a clean and reproducible graphene transfer on non-conducting substrates,...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961392⟩

• Communication dans un congrès

Architectures supramoléculaires sur la surface de Si(111)-B

Younes Makoudi, Judicaël Jeannoutot, Matthieu Beyer, Bulent Baris, B. Grandidier, Frank Palmino, Frédéric Cherioux

La formation des réseaux supramoléculaires périodiques à grande échelle sur une surface est d'un intérêt primordial pour le développement de composants intelligents [1]. Cet objectif nécessite la synthèse des molécules organiques ayant des fonctions appropriées en vue d'obtenir des...

17ème Forum des Microscopies à Sonde Locale, Mar 2014, Mantauban, France. session 7, papier 25, 68-69. ⟨hal-00961550⟩

• Communication dans un congrès

Monitoring conductance switching by light in azobenzene derivative-gold nano-particle self-assembled networks

Yannick Viero, Stéphane Lenfant, David Guérin, Dominique Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium M - Molecular materials - Towards quantum properties (MOLMAT-Q), 2014, Lille, France. ⟨hal-00957796⟩

• Article dans une revue

Cross-talk artefacts in Kelvin probe force microscopy imaging : a comprehensive study

Sophie Barbet, Michka Popoff, Heinrich Diesinger, D. Deresmes, Didier Theron, Thierry Melin

We provide in this article a comprehensive study of the role of ac cross-talk effects in Kelvin Probe Force Microscopy (KPFM), and their consequences onto KPFM imaging. The dependence of KPFM signals upon internal parameters such as the cantilever excitation frequency and the projection angle of...

Journal of Applied Physics, 2014, 115 (14), pp.144313. ⟨10.1063/1.4870710⟩. ⟨hal-00981142⟩

• Article dans une revue

Dielectric relaxation analysis of Pb(Zr_0.54,Ti_0.46)O₃ thin films: electric field dependence

Freddy Ponchel, N. Sama, Denis Remiens, T. Lasri

350 nm-thick Perovskite PbZr0.54Ti0.46O3 (PZT) thin films were deposited on Al2O3 substrates by sputtering with and without an additional 10-nm-thick TiOx buffer layer. X-ray diffraction patterns showed that in presence of TiOx buffer layer, PZT film was highly oriented along the (111) direction...

• Communication dans un congrès

Electro-optic and converse piezoelectric coefficients of epitaxial thin films : GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO (poster)

Mireille Cuniot-Ponsard, Irma Saraswati, Suk-Min Ko, Mathieu Halbwax, Yong-Hoon Cho, El Hadj Dogheche

We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.

Conference on Lasers and Electro-Optics, CLEO 2014, Laser Science to Photonic Applications, 2014, San Jose, CA, United States. ⟨hal-00975792⟩

• Article dans une revue

Electrical and Chemical studies on Al2O3 passivation activation process

M. Pawlik, J-P. Vilcot, M. Halbwax, D. Aureau, A. Etcheberry, A. Slaoui, T. Schutz-Kuchly, R. Cabal

Al2O3 deposited using Atomic layer Deposition (ALD) technique is known as an excellent material for p-type silicon surface passivation. However a post-deposition annealing step is needed to make the passivation effective. Thanks to coupled electrical measurements (capacitance and photoconductance)...

Energy Procedia, 2014, 60 (C), pp.85-89. ⟨10.1016/j.egypro.2014.12.347⟩. ⟨hal-05416094⟩