Publicaciones
Affichage de 8691 à 8700 sur 16278
Hexagonal boron nitride nanowalls : physical vapour deposition, 2D/3D morphology and spectroscopic analysis
B. Benmoussa, J. d'Haen, C. Borschel, J. Barjon, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen
Journal of Physics D: Applied Physics, 2012, 45, pp.135302-1-8. ⟨10.1088/0022-3727/45/13/135302⟩. ⟨hal-00788169⟩
Robustness of high-resolution channel parameter estimators in presence of dense multipath components
E. Tanghe, D.P. Gaillot, W. Joseph, M. Lienard, Pierre Degauque, L. Martens
Electronics Letters, 2012, 48, pp.130-132. ⟨10.1049/el.2011.3454⟩. ⟨hal-00788224⟩
Monte Carlo study of self-heating in nanoscale devices
T. Sadi, R.W. Kelsall, N.J. Pilgrim, Jean-Luc Thobel, F. Dessenne
Journal of Computational Electronics, 2012, 11, pp.118-128. ⟨10.1007/s10825-012-0395-x⟩. ⟨hal-00788225⟩
Elasticity of flexible and semiflexible polymers with extensible bonds in the Gibbs and Helmholtz ensembles
F. Manca, S. Giordano, Pier Luca Palla, R. Zucca, F. Cleri, L. Colombo
The Journal of Chemical Physics, 2012, 136, pp.154906-1-10. ⟨10.1063/1.4704607⟩. ⟨hal-00787357⟩
A 10 Gb/s 45 mW adaptive 60 GHz baseband in 65 nm CMOS
C. Thakkar, L. Kong, K. Jung, A. Frappe, E. Alon
IEEE Journal of Solid-State Circuits, 2012, 47, pp.952-968. ⟨10.1109/JSSC.2012.2184651⟩. ⟨hal-00787383⟩
Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers
M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Theron
Journal of Microelectromechanical Systems, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩. ⟨hal-00787408⟩
Integrative Technology-Based Approach of Microelectromechanical Systems (MEMS) for Biosensing Applications
Liviu Nicu, Thomas Alava, Thierry Leichle, Daisuke Saya, Jean Bernard Pourciel, Fabrice Mathieu, Caroline Soyer, Denis Remiens, Cédric Ayela, Karsten Haupt
EMBC'12, 2012, San Diego, United States. 4 p. ⟨hal-00865903⟩
Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode
X. Lei, Denis Remiens, N. Sama, Y. Chen, C.L. Mao, X.L. Dong, G.S. Wang
Journal of Crystal Growth, 2012, 347, pp.15-18. ⟨10.1016/j.jcrysgro.2012.03.026⟩. ⟨hal-00788337⟩
435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing
S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink
Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩
Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
T. Xu, K.A. Dick, S.R. Plissard, T.H. Nguyen, Y. Makoudi, Maxime Berthe, J.P. Nys, X. Wallart, B. Grandidier, P. Caroff
Nanotechnology, 2012, 23, pp.095702-1-9. ⟨10.1088/0957-4484/23/9/095702⟩. ⟨hal-00787477⟩