Publicaciones

Affichage de 8941 à 8950 sur 16278


  • Article dans une revue

Mie resonance based left-handed metamaterial in the visible frequency range

L. Kang, D. Lippens

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.195125-1-6. ⟨10.1103/PhysRevB.83.195125⟩. ⟨hal-00597076⟩

  • Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

  • Communication dans un congrès

Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine

A. Noudeviwa, A. Olivier, Yannick Roelens, Francois Danneville, Nicolas Wichmann, N. Waldhoff, L. Desplanque, X. Wallart, S. Bollaert

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 304, 2C2, 1-4. ⟨hal-00597144⟩

  • Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200...

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

  • Article dans une revue

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Xiaohui Tang, Christophe Krzeminski, Aurelien Lecavelier Des Etangs-Levallois, Zhenkun Chen, Emmanuel Dubois, Erich Kasper, Alim Karmous, Nicolas Reckinger, Denis Flandre, Laurent A. Francis, Jean-Pierre Collinge, Jean-Pierre Raskin

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge...

Nano Letters, 2011, 11, pp.4520-4526. ⟨10.1021/nl202434k⟩. ⟨hal-00640212v2⟩

  • Article dans une revue

CMOS integration using low thermal budget dopant-segregated metallic S/D junctions on thin-body SOI

G. Larrieu, Emmanuel Dubois, D. Ducatteau

ECS Transactions, 2011, 41, pp.275-282. ⟨10.1149/1.3633307⟩. ⟨hal-00795902⟩

  • Communication dans un congrès

Phase change memory as synapse for ultra-dense neuromorphic systems: application to complex visual pattern extraction

Manan Suri, Olivier Bichler, Damien Querlioz, Olga Cueto, Luca Perniola, Véronique Sousa, Dominique Vuillaume, Christian Gamrat, Barbara Desalvo

We demonstrate a unique energy efficient methodology to use Phase Change Memory (PCM) as synapse in ultra-dense large scale neuromorphic systems. PCM devices with different chalcogenide materials were characterized to demonstrate synaptic behavior. Multi-physical simulations were used to interpret...

IEEE International Electron Devices Meeting (IEDM 2011), Dec 2011, Washington, DC, United States. ⟨10.1109/IEDM.2011.6131488⟩. ⟨hal-00799997⟩

  • Communication dans un congrès

Fonctionnement de la photodiode à transport unipolaire et transition large bande guide d'onde-microruban dans la bande W

F. Pavanello

14èmes Journées Nationales du Réseau Doctoral de Micro et Nanoélectronique, JNRDM 2011, 2011, Cachan, France. pp.1-4. ⟨hal-00806720⟩