Publicaciones

• Article dans une revue

Vortex state in thin films of multicomponent ferroelectrics

Laurent Baudry, Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Lahoche

The distribution of polarization in thin film of multicomponent weak anisotropic ferroelectric under application of an axially symmetric electric field induced by circular electrodes is studied. We demonstrate that above a certain critical field the instability towards abrupt formation of...

Thin Solid Films, 2011, 519 (17), pp.5808-5810. ⟨10.1016/j.tsf.2010.12.192⟩. ⟨hal-00603009⟩

• Article dans une revue

Mechanical characterization of aluminium nanofilms

Gregory Guisbiers, Etienne Herth, L. Buchaillot

The mechanical properties (Young’s modulus, hardness, wear resistance) of aluminium nanofilms on silicon substrate are studied. Size effect on these mechanical properties are exhibited. Young’s modulus, hardness and wear resistance increases when the thickness is reduced. Experimental...

Microelectronic Engineering, 2011, 88 (5), pp.844-847. ⟨10.1016/j.mee.2010.06.028⟩. ⟨hal-00579052⟩

• Article dans une revue

Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

Y.M. Niquet, C. Delerue

Epitaxially grown semiconductor heterostructures make it possible to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily predictable behavior: it is constant everywhere except at the...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (7), pp.075478. ⟨10.1103/PhysRevB.84.075478⟩. ⟨hal-00639883⟩

• Communication dans un congrès

Accuracy of specular path estimates with ESPRIT and RiMAX in the presence of measurement-based diffuse multipath components

D.P. Gaillot, E. Tanghe, P. Stefanut, W. Joseph, M. Lienard, Pierre Degauque, L. Martens

5th European Conference on Antennas and Propagation, EuCAP 2011, 2011, Italy. pp.3619-3622. ⟨hal-00603111⟩

• Article dans une revue

Design, realization, and test of a 2.1-GHz low-phase-noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

Microwave and Optical Technology Letters, 2011, 53, pp.405-409. ⟨10.1002/mop.25690⟩. ⟨hal-00572638⟩

• Article dans une revue

A 45° silicon mirror for acoustic propagation parallel to the plane of the substrate

S. Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Assane Ndieguene, X. Zhao

The interest of a thin silicon oxide layer on a {110} silicon crystal planes used as 45° acoustical mirrors for reflection has been demonstrated. Passive mirror-like planes (groove depth ∼ 150 μm) were fabricated by wet chemical etching of (100) silicon. High frequency acoustical longitudinal waves...

Journal of Physics: Conference Series, 2011, 269, pp.012009-1-10. ⟨10.1088/1742-6596/269/1/012009⟩. ⟨hal-00572671⟩

• Autre publication scientifique

Fabrication et caractérisation de transistor à base de graphène nano ruban en vue d'application haute fréquence

Nan Meng

2011. ⟨hal-00574524⟩

• Article dans une revue

Erbium silicide growth in the presence of residual oxygen

N. Reckinger, Xing Tang, S. Godey, Emmanuel Dubois, A. Laszcz, J. Ratajczak, Adriana Vlad, C.A. Dutu, J.P. Raskin

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its...

Journal of The Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075v2⟩

• Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

• Article dans une revue

Identification and localization of electronic traps in AlGaN/GaN HEMTs on Al2O3 substrates using CDLTS

O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2380-2383. ⟨10.1166/sl.2011.1786⟩. ⟨hal-00795919⟩