Publicaciones

Affichage de 9061 à 9070 sur 16280


  • Autre publication scientifique

Transistor bipolaire Si/SiGe:C en noeud CMOS avancé pour applications (sub)-millimétriques

Thomas Lacave

2011. ⟨hal-00799453⟩

  • Article dans une revue

Fabrication of AD/DA microfluidic converter using deep reactive ion etching of silicon and low temperature wafer bonding

C. Wu, F. Bendriaa, F. Brunelle, V. Senez

Microelectronic Engineering, 2011, 88, pp.1878-1883. ⟨10.1016/j.mee.2010.12.001⟩. ⟨hal-00795913⟩

  • Article dans une revue

Use of catalytic oxidation and dehydrogenation of hydrocarbons reactions to highlight improvement of heat transfer in catalytic metallic foams

A. Löfberg, A. Essakhi, S. Paul, Y. Swesi, M.L. Zanota, V. Meille, I. Pitault, P. Supiot, B. Mutel, V. Le Courtois, E. Bordes-Richard

Chemical Engineering Journal, 2011, 176-177, pp.49-56. ⟨10.1016/j.cej.2011.04.064⟩. ⟨hal-00795915⟩

  • Communication dans un congrès

50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz

J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799699⟩

  • Communication dans un congrès

Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes

H. Happy, L. Nougaret, Vincent Derycke, Gilles Dambrine

IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/MWSYM.2011.5972794⟩. ⟨hal-00799792⟩

  • Communication dans un congrès

RF characterization of epitaxial graphene nano-ribbon field effect tansistors

N. Meng, J. Ferrer-Fernandez, O. Lancry, E. Pichonat, D. Vignaud, Gilles Dambrine, H. Happy

IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. 1-3, selected as finalist of best student paper competition, ⟨10.1109/MWSYM.2011.5972627⟩. ⟨hal-00799963⟩

  • Article dans une revue

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

G. Astromskas, K. Storm, P. Caroff, M. Borgström, E. Lind, L.E. Wernersson

Microelectronic Engineering, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩. ⟨hal-00592100⟩

  • Article dans une revue

Design, realization and test of a 2.1 GHz ultra-low phase noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

AEU. International Journal of Electronics and Communications, 2011, 65, pp.602-607. ⟨10.1016/j.aeue.2010.09.004⟩. ⟨hal-00591316⟩