Publicaciones

• Communication dans un congrès

A honeycomb-based piezoelectric actuator for a flapping wing MAV

K.R. Olympio, G. Poulin-Vittrant

SPIE Smart Structures/NDE, Active and Passive Smart Structures and Integrated Systems, 2011, San Diego, CA, United States. pp.79771U-1-16, ⟨10.1117/12.877073⟩. ⟨hal-00799673⟩

• Communication dans un congrès

100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation

J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert

23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. pp.1-4. ⟨hal-00799971⟩

• Communication dans un congrès

A 4.596 GHz frequency synthesis based on a solid-mounted resonator oscillator

R. Boudot, V. Giordano, M.D. Li, N. Rolland, P.A. Rolland, P. Vincent

Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, IFCS/EFTF 2011, 2011, San Francisco, CA, United States. pp.1-3, ⟨10.1109/FCS.2011.5977746⟩. ⟨hal-00799980⟩

• Article dans une revue

Cognitive Cooperation for the Downlink of Frequency Reuse Small Cells

Salam Akoum, Marie Zwingelstein, Robert W. Heath Jr., Merouane Debbah

We develop a cooperative diversity protocol that is coded over space, time and frequency to achieve improved quality of service for mobile users in the downlink of small cells frequency reuse networks. The proposed protocol, called Cooperative Frequency Reuse (CFR), leverages the cellular frequency...

EURASIP Journal on Advances in Signal Processing, 2011, 2011, pp.EURASIP2010-Akoum. ⟨10.1155/2011/525271⟩. ⟨hal-00553503v2⟩

• Article dans une revue

High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition- grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the...

IEEE Electron Device Letters, 2011, 32 (7), pp.874-876. ⟨10.1109/LED.2011.2138674⟩. ⟨hal-00639802⟩

• Article dans une revue

InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, Virginie Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2011, 32, pp.1537-1539. ⟨10.1109/LED.2011.2166949⟩. ⟨hal-00639917⟩

• Article dans une revue

A complete UMTS transmitter using BAW filters and duplexer : a 90-nm CMOS digital RF signal generator and a 0.25-μm BiCMOS power amplifier

A. Flament, A. Frappe, B. Stefanelli, A. Kaiser, A. Cathelin, S. Giraud, Matthieu Chatras, Stéphane Bila, Dominique Cros, J.B. David, L. Leyssenne, E. Kerherve

International Journal of RF and Microwave Computer-Aided Engineering, 2011, 21, pp.466-476. ⟨10.1002/mmce.20551⟩. ⟨hal-00639862⟩

• Article dans une revue

Complex permittivity of low loss materials in the X band

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Science and Advanced Technology, 2011, 1, pp.221-224. ⟨hal-00639915⟩

• Article dans une revue

Shielded cable transfer impedance measurements in the microwave range of 1 GHz to 10 GHz

B. Demoulin, L. Kone

IEEE Electromagnetic Compatibility Society Newsletter, 2011, 229, pp.52-61. ⟨hal-00639920⟩

• Communication dans un congrès

Nanostructured PANI-based materials for sensor and molecular electronics applications

V.N. Bliznyuk, J.L. Wojkiewicz, S. Carquigny, N. El Kamchi, N. Redon, T. Lasri, A.A. Pud

International Conference on Organic Electronics, ICOE 2011, 2011, Rome, Italy. pp.78-79. ⟨hal-00800348⟩