Publicaciones

• Article dans une revue

Formations internationales bi diplômantes à l'ENSIAME : du premier double diplôme européen à la conquête des autres continents

Laurent Cauffriez, Sébastien Grondel, Daniel Coutellier

Fortes de l’expérience acquise au cours des 20 dernières années dans le domaine des relations franco-allemandes à travers son réseau d’entreprises, l’ENSIAME, école d’ingénieurs fédérant aujourd’hui l’ensemble des formations d’ingénieurs de l’université de Valenciennes, a ensuite élargi les...

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2011, 10, pp.1001-1-9. ⟨10.1051/j3ea/2011001⟩. ⟨hal-00806668⟩

• Communication dans un congrès

Développement d'un banc de caractérisation non linéaire dans le domaine fréquentiel pour la caractérisation et la modélisation de transistors de puissance

R. Ouhachi, A. Pottrain, T. Lacave, D. Ducatteau, P. Chevalier, D. Gloria, Christophe Gaquière

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. papier 118, 2F6, 1-4. ⟨hal-00603134⟩

• Communication dans un congrès

The acoustic phonon dispersion of ultra-thin silicon membranes measured by inelastic light scattering spectroscopy

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, J.G. Mcinerney, C.M. Sotomayor-Torres

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium BB : Nanoscale heat transport - From fundamentals to devices, 2011, San Francisco, CA, United States. ⟨hal-00807259⟩

• Communication dans un congrès

Dispersion of confined acoustic phonons in ultra-thin Si membranes

J. Cuffe, E. Chavez, P.O. Chapuis, E.H. El Boudouti, F. Alzina, D. Dudek, Yan Pennec, Bahram Djafari-Rouhani, A. Shchepetov, M. Prunnila, J. Ahopelto, C.M. Sotomayor Torres

The acoustic phonon dispersion curves of ~10 and ~30 nm Si membranes were measured using Brillouin Light Scattering (BLS) spectroscopy. The dispersion relations of the confined phonons were calculated from a semi-analytical model based on continuum elasticity theory. Green’s function simulations...

1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, United States. pp.218-219. ⟨hal-00800075⟩

• Article dans une revue

Opening of simultaneous photonic and phononic band gap in two-dimensional square lattice periodic structure

Driss Bria, B. Assouar, Mourad Oudich, Yan Pennec, Jerome O. Vasseur, Bahram Djafari-Rouhani

We discuss two points related to the simultaneous existence of phononic and photonic band gaps in a two-dimensional crystal constituted by a square array of holes drilled in a matrix. In a first part, using the case of a sapphire sample in the microwave range, we show that in addition to the...

Journal of Applied Physics, 2011, 109 (1), pp.014507. ⟨10.1063/1.3530682⟩. ⟨hal-00579068⟩

• Autre publication scientifique

Tunneling spectroscopy of hetero-nanocrystals

Thanh Hai Nguyen

2011. ⟨hal-00799435⟩

• Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

• Autre publication scientifique

Développements de capacités variables en technologie silicium pour les applications RF et mmW

Romain Debroucke

2011. ⟨hal-00799451⟩

• Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled...

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩