Publicaciones

• Article dans une revue

2D-hydrodynamic energy model including breakdown phenomenon for power field effect transistor

Michel Rousseau, Jean-Claude de Jaeger

VLSI Systems Design, 2001, 13, pp.323-328. ⟨hal-00152593⟩

• Communication dans un congrès

L'interface physique biologie

D. Stievenard

Journées Micro et Nanotechnologies, 2001, Paris, France. ⟨hal-00152581⟩

• Autre publication scientifique

Modélisation par éléments finis du comportement des alliages à mémoire de forme

S. Rafanomezantsoa

2001. ⟨hal-00151684⟩

• Communication dans un congrès

Structural and electronic studies of InAs quantum dots embedded in GaAs by scanning tunneling microscopy

B. Grandidier

Alaska Meeting on Fundamental Optical Properties in Semiconductors, 2001, Girdwood, AK, United States. ⟨hal-00152583⟩

• Communication dans un congrès

An efficient modelling of the impulse response of the indoor power line communication channels in high frequency range

Patrick Corlay, François-Xavier Coudoux, Marc G. Gazalet, F. Ruolt, F. Haine

2001, pp.149-154. ⟨hal-00152914⟩

• Article dans une revue

Modeling and underwater characterization of cymbal transducers and arrays

J. Zhang, Anne-Christine Hladky, W.J. Hughes, R. Newnham

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2001, 48, pp.560-568. ⟨hal-00151690⟩

• Communication dans un congrès

Clinical results in microwave radiometric mammography

Bertrand Bocquet, G. Tittelein, Roger Ringot

PhotonIcs and Electromagnetics Research Symposium, 2001, Osaka, Japan. pp.108. ⟨hal-00152030⟩

• Article dans une revue

Ultrahigh frequency DC-to-DC converters using GaAs power switches

Sami Ajram, Georges Salmer

A detailed investigation of the switching characteristics for high frequency power devices based on different technologies has been provided: BJT, MOSFET, and MESFET/HEMT structures are considered. Advantages of GaAs power switches over silicon ones have been established and illustrated. Hybrid...

IEEE Transactions on Power Electronics, 2001, 16, pp.594-602. ⟨10.1109/63.949492⟩. ⟨hal-00152026⟩

• Article dans une revue

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

D. Mistele, Zahia Bougrioua, T. Rotter, I. Moerman, K.S. Röver, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate...

MRS Online Proceedings Library, 2001, 693, ⟨10.1557/PROC-693-I6.51.1⟩. ⟨hal-02906500⟩

• Article dans une revue

Numerical simulation of acoustic conjugation in active media

S. Ben Khelil, A. Merlen, Philippe Pernod, Vladimir Preobrazhensky

Journal of the Acoustical Society of America, 2001, 109, pp.75-83. ⟨hal-00152097⟩