Publicaciones

• Article dans une revue

Study of the effects of signal filtering on acousto-optic correlator performance

O. Bazzi, Marc G. Gazalet, Y. Mohanna, A. Alaeddine, A. Hafiz

Optical Engineering, 2006, 45, pp.128201-1-7. ⟨hal-00147741⟩

• Communication dans un congrès

Evaluation of a tunnel ground to train UWB communication

H. Saghir, M. Heddebaut, F. Elbahhar, Jean-Michel Rouvaen

2006, pp.1-5. ⟨hal-00147735⟩

• Chapitre d'ouvrage

Rythmes de la sédimentation et interprétations paléoclimatiques lors du Postglaciaire dans les Alpes du Sud C et dendro-géomorphologie, deux chronomètres complémentaires

Olivier Sivan, Corinne Miramond, Jean-Louis Édouard

L'Erosion entre société, Climat et Paléoenvironnement., Presses universitaires Blaise-Pascal, s.p., 2006. ⟨halshs-00321976⟩

• Article dans une revue

Interfaces between gamma-Al2O3 and silicon

Pierre Boulenc, Isabelle Devos

As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a g-Al2O3 buffer layer between the high-k and the substrate. We firstly studied the structural matching of g-Al2O3(0 0 1) with a Si(0 0 1)-pð2 1Þ reconstructed surface. According to experimental data and...

Materials Science in Semiconductor Processing, 2006, 9 (6), pp.949-953. ⟨10.1016/j.mssp.2006.10.043⟩. ⟨hal-00152970⟩

• Article dans une revue

Spectral characterisation of monolithic modelocked lasers for mm-wave generation and signal processing

P. Acedo, H. Lamela, S. Garidel, C. Roda, Jean-Pierre Vilcot, G. Carpintero, I.H. White, K.A. Williams, M. Thompson, W. Li, M. Pessa, M. Dumitrescu, S. Hansmann

Electronics Letters, 2006, 42, pp.928-929. ⟨hal-00154943⟩

• Article dans une revue

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (...

Journal of Microscopy, 2006, 224 (1), pp.38-41. ⟨10.1111/j.1365-2818.2006.01653.x⟩. ⟨hal-00138660⟩

• Article dans une revue

Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy

D. Vignaud, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2006, 291, pp.107-111. ⟨hal-00127061⟩

• Article dans une revue

Réfracter la lumière à l'envers

D. Lippens

Pour la science, 2006, 345, pp.68-74. ⟨hal-00127068⟩

• Article dans une revue

Optoelectronic switch and memory devices based on polymer functionalized carbon nanotubes

J. Borghetti, Vincent Derycke, S. Lenfant, P. Chenevier, A. Filoramo, M. Goffman, D. Vuillaume, J.P. Bourgoin

Advanced Materials, 2006, 18, pp.2535-2540. ⟨hal-00127119⟩

• Article dans une revue

Experimental verification of left-handed characteristics of split ring resonators and wires array in finline

A. Marteau, Eric Lheurette, T. Decoopman, X. Melique, O. Vanbesien, D. Lippens

EuMA - Journal of the European Microwave Association, 2006, 2, pp.38-43. ⟨hal-00126830⟩