Publicaciones
Affichage de 15701 à 15710 sur 16434
1 W/mm GaAs PHEMT for realization of linear power amplifier in the K band
X. Hue, E. Rogeaux, J.L. Cazaux, Alain Mallet, L. Lapierre, B. Boudart, B. Bonte, Y. Crosnier
2000, pp.228-231. ⟨hal-00158977⟩
Silicon nitride passivation on GaN MESFET's
Christophe Gaquière, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, Jean-Claude de Jaeger, F. Omnes
2000, pp.VIII-11, VIII-12. ⟨hal-00159001⟩
Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate
N. Cavassilas, F. Aniel, A. Nojeh, R. Adde, M. Zaknoune, S. Bollaert, Y. Cordier, D. Theron, A. Cappy
2000, 10 pp. ⟨hal-00159003⟩
Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence
S. Trassaert
2000. ⟨hal-00158975⟩
First results of GaN MESFET's realized on (111) Si
Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159036⟩
On the design of multimode ultrasonic transducers for acoustooptic correlation applications
Jean-Michel Rouvaen, Atika Rivenq, P. Logette, Philippe Goutin, F. Haine
Journal of Physics D: Applied Physics, 2000, 33, pp.3041-3052. ⟨hal-00159047⟩
Modeling of Lamb waves generated by integrated transducers in composite plates using a coupled finite element-normal modes expansion method
Emmanuel Moulin, Jamal Assaad, Christophe Delebarre, D. Osmont
Journal of the Acoustical Society of America, 2000, 107, pp.87-94. ⟨hal-00159070⟩
Low field anisotropic magnetostriction of single domain exchange-coupled (TbFe/Fe) multilayers
Henri Le Gall, Jamal Ben Youssef, F. Socha, Nicolas Tiercelin, Vladimir Preobrazhensky, Philippe Pernod
Journal of Applied Physics, 2000, 87, pp.5783-5785. ⟨10.1063/1.372521⟩. ⟨hal-00158455⟩